Diverse models have been proposed for explaining the electrical performance of memristive devices. In principle, the behavior of internal variables associated to each one could be extracted from experimental results. ...Diverse models have been proposed for explaining the electrical performance of memristive devices. In principle, the behavior of internal variables associated to each one could be extracted from experimental results. In a former work, thermally grown TiOmemristive structures were built and characterized to obtain the constitutive relationship(magnetic flux versus charge). The aim of this work is to continue that analysis by determining the microscopic parameters within the frame of a simple model. We use the already obtained memristance dependence of time and the basic expressions from the non-linear model proposed by Strukov et al. to compute the state-variable,the mobility of the doping species, the speed of the boundary between the doped and the undoped regions, the voltages and the electric fields on the distinct regions. The power dissipation and its time evolution are also presented. Moreover, a quite different window function from those formerly proposed, which was estimated from experimental data, is also determined. This information provides a straightforward picture of the ionic transport during one cycle of a square voltage waveform within the framework of this simple model. Finally, a quality factor is proposed as the key parameter for actual memristors viewed under the same model.展开更多
文摘Diverse models have been proposed for explaining the electrical performance of memristive devices. In principle, the behavior of internal variables associated to each one could be extracted from experimental results. In a former work, thermally grown TiOmemristive structures were built and characterized to obtain the constitutive relationship(magnetic flux versus charge). The aim of this work is to continue that analysis by determining the microscopic parameters within the frame of a simple model. We use the already obtained memristance dependence of time and the basic expressions from the non-linear model proposed by Strukov et al. to compute the state-variable,the mobility of the doping species, the speed of the boundary between the doped and the undoped regions, the voltages and the electric fields on the distinct regions. The power dissipation and its time evolution are also presented. Moreover, a quite different window function from those formerly proposed, which was estimated from experimental data, is also determined. This information provides a straightforward picture of the ionic transport during one cycle of a square voltage waveform within the framework of this simple model. Finally, a quality factor is proposed as the key parameter for actual memristors viewed under the same model.
