The mechanical properties, such as the elastic constants C11, C12, C44, and bulk, Young＇s, and shear moduli, of a Ga x In1-x As y P1-y alloy lattice matching to a Ga As substrate are calculated for various As concent...The mechanical properties, such as the elastic constants C11, C12, C44, and bulk, Young＇s, and shear moduli, of a Ga x In1-x As y P1-y alloy lattice matching to a Ga As substrate are calculated for various As concentrations. The calculations are based on the pseudo-potential method within the virtual crystal approximation containing the effective disorder potential. The variations of the studied properties with pressure and temperature are investigated. A comparison between the calculated results and the available published data for binary parent compounds shows that they have good agreement,while the calculated results for the quaternary alloys at various temperature and pressure may be taken as a reference.展开更多
The electronic band structure of GaxIn1-xAs alloy is calculated by using the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional e...The electronic band structure of GaxIn1-xAs alloy is calculated by using the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional effect of the electronic energy band structure of this alloy is studied with composition x ranging from 0 to 1. Various physical quantities such as band gaps, bowing parameters, refractive indices, and high frequency dielectric constants of the considered alloys with different Ga concentrations are calculated. The effects of both temperature and hydrostatic pressure on the calculated quantities are studied. The obtained results are found to be in good agreement with the available experimental and published data.展开更多
文摘The mechanical properties, such as the elastic constants C11, C12, C44, and bulk, Young＇s, and shear moduli, of a Ga x In1-x As y P1-y alloy lattice matching to a Ga As substrate are calculated for various As concentrations. The calculations are based on the pseudo-potential method within the virtual crystal approximation containing the effective disorder potential. The variations of the studied properties with pressure and temperature are investigated. A comparison between the calculated results and the available published data for binary parent compounds shows that they have good agreement,while the calculated results for the quaternary alloys at various temperature and pressure may be taken as a reference.
文摘The electronic band structure of GaxIn1-xAs alloy is calculated by using the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional effect of the electronic energy band structure of this alloy is studied with composition x ranging from 0 to 1. Various physical quantities such as band gaps, bowing parameters, refractive indices, and high frequency dielectric constants of the considered alloys with different Ga concentrations are calculated. The effects of both temperature and hydrostatic pressure on the calculated quantities are studied. The obtained results are found to be in good agreement with the available experimental and published data.
