A new process for electrolytic production of a perfluorinated compound, （CF3）3N, using lanthanum nickel oxide-coated Ni sheet anode in the （CH3）4NF· 4.0HF melt at room temperature, was developed. Thin films o...A new process for electrolytic production of a perfluorinated compound, （CF3）3N, using lanthanum nickel oxide-coated Ni sheet anode in the （CH3）4NF· 4.0HF melt at room temperature, was developed. Thin films of the lanthanum nickel oxides were prepared on Ni sheets by sol-gel coating method using polyvinlylpyrrolidone（PVP）. The main components of the thin films were La2O3, LaNiO3, and La2NiO4 at 500, 750 and 1000℃, respectively. The anode performance in the （CH3）4NF·4.0HF melt depends greatly on the main component of the thin film, and the LaNiO3-coated Ni sheet anode gives the best anode performance. The potential of LaNiO3-coated Ni sheet anode remains constant at 5.9 V during electrolysis at 20 mA·cm^-2 in the （CH3）4NF·4.0HF melt for 100 h. This is because LaNiO3 and NiF3 and/or Ni2F5, the latter of which was formed during electrolysis, in the film give a high electronic conductivity to the surface film during electrolysis. The maximum mole fraction of （CF3）3N （21.4%） was obtained at 20 mA·cm^-2 in （CH3）4NF·4.0HF melt using the LaNiO3-coated Ni sheet.展开更多
The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with t...The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.展开更多
文摘A new process for electrolytic production of a perfluorinated compound, （CF3）3N, using lanthanum nickel oxide-coated Ni sheet anode in the （CH3）4NF· 4.0HF melt at room temperature, was developed. Thin films of the lanthanum nickel oxides were prepared on Ni sheets by sol-gel coating method using polyvinlylpyrrolidone（PVP）. The main components of the thin films were La2O3, LaNiO3, and La2NiO4 at 500, 750 and 1000℃, respectively. The anode performance in the （CH3）4NF·4.0HF melt depends greatly on the main component of the thin film, and the LaNiO3-coated Ni sheet anode gives the best anode performance. The potential of LaNiO3-coated Ni sheet anode remains constant at 5.9 V during electrolysis at 20 mA·cm^-2 in the （CH3）4NF·4.0HF melt for 100 h. This is because LaNiO3 and NiF3 and/or Ni2F5, the latter of which was formed during electrolysis, in the film give a high electronic conductivity to the surface film during electrolysis. The maximum mole fraction of （CF3）3N （21.4%） was obtained at 20 mA·cm^-2 in （CH3）4NF·4.0HF melt using the LaNiO3-coated Ni sheet.
文摘The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.
