作为可再生能源之一的太阳能光伏发电,是目前当前新能源应用的热点。中国各地区安装了大量光伏电站,但是由于各地太阳辐照强度、日照时间和气温等的差异,光伏电站的实际发电量差异较大。研究分析光伏电站的实际发电量可为实际工程应用...作为可再生能源之一的太阳能光伏发电,是目前当前新能源应用的热点。中国各地区安装了大量光伏电站,但是由于各地太阳辐照强度、日照时间和气温等的差异,光伏电站的实际发电量差异较大。研究分析光伏电站的实际发电量可为实际工程应用提供有效的参考数据,比较分析了三个不同地区且电站容量均为5 k W的光伏电站在2014年和2015年的发电量,并分析了相关的影响因素,希望为光伏电站设计人员和决策人员提供实践数据参考。展开更多
A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） pl...A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron （TMB） to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, PTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the μc-Si：H thin film＇s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped μc-Si：H layers showed specific resistance of 38.3 Ω^-1cm1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and source gas partial pressure on μc-Si：H thin film＇s performance was also investigated.展开更多
文摘作为可再生能源之一的太阳能光伏发电,是目前当前新能源应用的热点。中国各地区安装了大量光伏电站,但是由于各地太阳辐照强度、日照时间和气温等的差异,光伏电站的实际发电量差异较大。研究分析光伏电站的实际发电量可为实际工程应用提供有效的参考数据,比较分析了三个不同地区且电站容量均为5 k W的光伏电站在2014年和2015年的发电量,并分析了相关的影响因素,希望为光伏电站设计人员和决策人员提供实践数据参考。
基金supported by the National "863" Project of China (Grant No.2006AA05Z409)the "Kaisi" Oversea R&D Schol-arship of Sun Yat-sen University
文摘A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron （TMB） to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, PTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the μc-Si：H thin film＇s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped μc-Si：H layers showed specific resistance of 38.3 Ω^-1cm1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and source gas partial pressure on μc-Si：H thin film＇s performance was also investigated.
