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Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT 被引量:4
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作者 MENGXiangti WANGRuipian +3 位作者 KANGAiguo WANGJilin JIAHongyong chenpe 《Rare Metals》 SCIE EI CAS CSCD 2003年第1期69-74,共6页
The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alt... The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe HBT.The higher the neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed. 展开更多
关键词 semiconductor technology SiGe HBT neutron irradiation Si BJT electrical performance
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