Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon–dioxide matrix.This is performed by comparing ultrafast photo-induced absorption transients at different pump ...Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon–dioxide matrix.This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process.The average germanium nanocrystal size is approximately 5–6 nm,as inferred from photoluminescence and Raman spectra.A carrier multiplication efficiency of approximately 190%is measured for photo-excitation at 2.8 times the optical bandgap of germanium nanocrystals,deduced from their photoluminescence spectra.展开更多
基金This work was financially supported by the Foundation for Fundamental Research on Matter(FOM).
文摘Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon–dioxide matrix.This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process.The average germanium nanocrystal size is approximately 5–6 nm,as inferred from photoluminescence and Raman spectra.A carrier multiplication efficiency of approximately 190%is measured for photo-excitation at 2.8 times the optical bandgap of germanium nanocrystals,deduced from their photoluminescence spectra.
