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Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD
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作者 Wenbo Tang Xueli Han +11 位作者 Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou chunxu bian Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang 《Journal of Semiconductors》 EI CAS CSCD 2023年第6期39-45,共7页
Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth ... Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy. 展开更多
关键词 homoepitaxial growth MOCVD Si-doping films high activation efficiency Ohmic contacts
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A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties
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作者 Botong Li Xiaodong Zhang +10 位作者 Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou chunxu bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang 《Journal of Semiconductors》 EI CAS CSCD 2023年第6期7-23,共17页
Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As ... Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed. 展开更多
关键词 enhancement mode FETS β-Ga_(2)O_(3)
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