Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu...Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.展开更多
Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation...Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy.Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing attention.At present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices.Here,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere.This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with light.Moreover,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism.Hence,this study is an important step towards the next generation of artificial visual systems.展开更多
A vapor deposition method was applied to synthesize zinc oxide(ZnO) nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure d...A vapor deposition method was applied to synthesize zinc oxide(ZnO) nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure during growth. Results of scanning electron microscopy(SEM) and high resolution transmission electron microscopy(TEM) proved the hexagonal wurtzite structure of the synthesized ZnO nanowires or nanorods, which grow along the <0001> direction. The results show that the growth conditions strongly impact the morphology, growth rate and optical properties of the ZnO nanostructures.The ZnO nanowires with small diameters tend to show stronger ultraviolet(UV) light emission from the electron-hole recombination near band edge in photoluminescence(PL), while those with larger diameters tend to exhibit PL spectra dominated by the broad green light emission due to the defects.展开更多
基金supported by National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Natural Science Foundation of China(LD19E020001)+1 种基金Zhejiang Provincial Key Research and Development Program(2021C01030)"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province(2021C01SA301612)。
文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
基金This work was supported in part by the National Natural Science Foundation of China(U20A20209 and 61874125)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB32050204)+1 种基金the Zhejiang Provincial Natural Science Foundation of China(LD19E020001 and LQ22F040003)the State Key Laboratory of Silicon Materials(SKL2021-03).
文摘Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy.Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing attention.At present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices.Here,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere.This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with light.Moreover,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism.Hence,this study is an important step towards the next generation of artificial visual systems.
基金financially supported by the National Natural Science Foundation of China (No. 61428403 and 51422106)
文摘A vapor deposition method was applied to synthesize zinc oxide(ZnO) nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure during growth. Results of scanning electron microscopy(SEM) and high resolution transmission electron microscopy(TEM) proved the hexagonal wurtzite structure of the synthesized ZnO nanowires or nanorods, which grow along the <0001> direction. The results show that the growth conditions strongly impact the morphology, growth rate and optical properties of the ZnO nanostructures.The ZnO nanowires with small diameters tend to show stronger ultraviolet(UV) light emission from the electron-hole recombination near band edge in photoluminescence(PL), while those with larger diameters tend to exhibit PL spectra dominated by the broad green light emission due to the defects.
