Bilayer (BL) molybdenum disulfide (MoS_(2)) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré s...Bilayer (BL) molybdenum disulfide (MoS_(2)) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré superlattices. In this work, BL MoS_(2) on sapphire substrate with 2H-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS_(2). The optical conductivity of BL MoS_(2) is obtained in temperature regime from 80 K to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS_(2) can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS_(2), BL MoS_(2) with 2H-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS_(2) differ from those observed for ML MoS_(2). The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS_(2) based twistronic systems for novel applications as optical and optoelectronic materials and devices.展开更多
基金supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.U2230122 and U2067207)Shenzhen Science and Technology Program(No.KQTD20190929173954826).
文摘Bilayer (BL) molybdenum disulfide (MoS_(2)) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré superlattices. In this work, BL MoS_(2) on sapphire substrate with 2H-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS_(2). The optical conductivity of BL MoS_(2) is obtained in temperature regime from 80 K to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS_(2) can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS_(2), BL MoS_(2) with 2H-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS_(2) differ from those observed for ML MoS_(2). The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS_(2) based twistronic systems for novel applications as optical and optoelectronic materials and devices.
