In this review,we introduce the current state of the art of the growth technology of pure,lightly doped,and heavily doped(solid solution)nonlinear gallium selenide(GaSe)crystals that are able to generate broadband emi...In this review,we introduce the current state of the art of the growth technology of pure,lightly doped,and heavily doped(solid solution)nonlinear gallium selenide(GaSe)crystals that are able to generate broadband emission from the near infrared(IR)(0.8 mm)through the mid-and far-IR(terahertz(THz))ranges and further into the millimeter wave(5.64 mm)range.For the first time,we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters.After appropriate doping,uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range.Moreover,doping provides the following benefits:raises by up to 5 times the optical damage threshold;almost eliminates two-photon absorption;allows for dispersion control in the THz range independent of the mid-IR dispersion;and enables crystal processing in arbitrary directions due to the strengthened lattice.Finally,doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency.展开更多
基金This work is supported in part by the Visiting Professor Program of State Key Laboratory of Laser Interaction with Matter of Changchun Institute of Optics,Fine Mechanics and Physics CAS,Changchun,China,the Open Fund by State Key Laboratory of Laser Interaction with Matter(No.SKLLIM1012)the RNF(Project No.15-19-10021,physical properties study),the Tomsk State University(8.1.51.2015)+1 种基金Tomsk Regional Common Use Center,with the support of the Russian Ministry of Education and Science(Agreement No.14.594.21.0001,code RFMEFI59414X0001,spectroscopic study)the Presidium SB RAS,Project VIII.80.2.4(optical properties study in THz range).
文摘In this review,we introduce the current state of the art of the growth technology of pure,lightly doped,and heavily doped(solid solution)nonlinear gallium selenide(GaSe)crystals that are able to generate broadband emission from the near infrared(IR)(0.8 mm)through the mid-and far-IR(terahertz(THz))ranges and further into the millimeter wave(5.64 mm)range.For the first time,we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters.After appropriate doping,uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range.Moreover,doping provides the following benefits:raises by up to 5 times the optical damage threshold;almost eliminates two-photon absorption;allows for dispersion control in the THz range independent of the mid-IR dispersion;and enables crystal processing in arbitrary directions due to the strengthened lattice.Finally,doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency.
