In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polar...In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polarizer.To address this inefficiency and optimize energy utilization,this study presents a high-performance device designed for RGB polarized emissions.The device employs an array of semipolar blueμLEDs with inherent polarization capabilities,coupled with mechanically stretched films of green-emitting CsPbBr3 nanorods and red-emitting CsPbI3-Cs4PbI6 hybrid nanocrystals.The CsPbBr3 nanorods in the polymer film offer intrinsic polarization emission,while the aligned-wire structures formed by the stable CsPbI3-Cs4PbI6 hybrid nanocrystals contribute to substantial anisotropic emissions,due to their high dielectric constant.The resulting device achieved RGB polarization degrees of 0.26,0.48,and 0.38,respectively,and exhibited a broad color gamut,reaching 137.2%of the NTSC standard and 102.5%of the Rec.2020 standard.When compared to a device utilizing c-plane LEDs for excitation,the current approach increased the intensity of light transmitted through the polarizer by 73.6%.This novel fabrication approach for polarized devices containing RGB components holds considerable promise for advancing next-generation display technologies.展开更多
Micro-light-emitting diodes(micro-LEDs)with outstanding performance are promising candidates for next-generation displays.To achieve the application of high-resolution displays such as meta-displays,virtual reality,an...Micro-light-emitting diodes(micro-LEDs)with outstanding performance are promising candidates for next-generation displays.To achieve the application of high-resolution displays such as meta-displays,virtual reality,and wearable electronics,the size of LEDs must be reduced to the micro-scale.Thus,traditional technology cannot meet the demand during the processing of micro-LEDs.Recently,lasers with short-duration pulses have attracted attention because of their unique advantages during micro-LED processing such as noncontact processing,adjustable energy and speed of the laser beam,no cutting force acting on the devices,high efficiency,and low cost.Herein,we review the techniques and principles of laser-based technologies for micro-LED displays,including chip dicing,geometry shaping,annealing,laserassisted bonding,laser lift-off,defect detection,laser repair,mass transfer,and optimization of quantum dot color conversion films.Moreover,the future prospects and challenges of laser-based techniques for micro-LED displays are discussed.展开更多
Deep-ultraviolet(DUV)sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability,eco-friendliness,high potency,and broad-spectrum sterilization.This study compiles the develop...Deep-ultraviolet(DUV)sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability,eco-friendliness,high potency,and broad-spectrum sterilization.This study compiles the developments of recent DUV sterilization research.Recent works have investigated DUV sterilization from the perspective of device improvement and principle investigation:one employed a novel epitaxial structure to optimize the performance and fabrication cost of DUV-LEDs and realized potent virus disinfection effects for various respiratory RNA viruses,and another work explained the disinfection phenomenon of SARS-CoV-2 and its variants(Delta and Omicron)in a cryogenic environment.These studies have contributed significantly to the development of DUV sterilization.展开更多
Augmented reality(AR)and virtual reality(VR)are two novel display technologies that are under updates.The essential feature of AR/VR is the full-color display that requires high pixel densities.To generate three-color...Augmented reality(AR)and virtual reality(VR)are two novel display technologies that are under updates.The essential feature of AR/VR is the full-color display that requires high pixel densities.To generate three-color pixels,the fluorescent color conversion layer inevitably includes green and red pixels.To fabricate such sort of display kits,inkjet printing is a promising way to position the color conversion layers.In this review article,the progress of AR/VR technologies is first reviewed,and in succession,the state of the art of inkjet printing,as well as two key issues-the optimization of ink and the reduction of coffee-ring effects,are introduced.Finally,some potential problems associated with the color converting layer are highlighted.展开更多
With regard to micro-light-emitting diodes(micro-LEDs),their excellent brightness,low energy consumption,and ultrahigh resolution are significant advantages.However,the large size of traditional inorganic phosphors an...With regard to micro-light-emitting diodes(micro-LEDs),their excellent brightness,low energy consumption,and ultrahigh resolution are significant advantages.However,the large size of traditional inorganic phosphors and the number of side defects have restricted the practical applications of small sized micro-LEDs.Recently,quantum dot(QD)and nonradiative energy transfer(NRET)have been proposed to solve existing problems.QDs possess nanoscale dimensions and high luminous efficiency,and they are suitable for NRET because they are able to nearly contact the micro-LED chip.The NRET between QDs and micro-LED chip further improves the color conversion efficiency(CCE)and effective quantum yield(EQY)of full-color micro-LED devices.In this review,we discuss the NRET mechanism for QD micro-LED devices,and then nano-pillar LED,nano-hole LED,and nano-ring LED are introduced in detail.These structures are beneficial to the NRET between QD and micro-LED,especially nano-ring LED.Finally,the challenges and future envisions have also been described.展开更多
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser（VCSEL）, discussing the structural design, mode control and the related data transmission perform...This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser（VCSEL）, discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAsmultiple quantum well （MQW） was used to increase the differential gain and photon density in VCSEL. The multiple oxidelayers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode （SM） VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.展开更多
The evolution of next-generation cellular networks is aimed at creating faster,more reliable solutions.Both the next-generation 6G network and the metaverse require high transmission speeds.Visible light communication...The evolution of next-generation cellular networks is aimed at creating faster,more reliable solutions.Both the next-generation 6G network and the metaverse require high transmission speeds.Visible light communication(VLC)is deemed an important ancillary technology to wireless communication.It has shown potential for a wide range of applications in next-generation communication.Micro light-emitting diodes(μLEDs)are ideal light sources for high-speed VLC,owing to their high modulation bandwidths.In this review,an overview ofμLEDs for VLC is presented.Methods to improve the modulation bandwidth are discussed in terms of epitaxy optimization,crystal orientation,and active region structure.Moreover,electroluminescent white LEDs,photoluminescent white LEDs based on phosphor or quantum-dot color conversion,andμLED-based detectors for VLC are introduced.Finally,the latest high-speed VLC applications and the application prospects of VLC in 6G are introduced,including underwater VLC and artificial intelligence-based VLC systems.展开更多
In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Scho...In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.展开更多
Micro-light-emitting diodes(μ-LEDs)are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications,such as mobile phones,wearable watches,virtual/augmen...Micro-light-emitting diodes(μ-LEDs)are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications,such as mobile phones,wearable watches,virtual/augmented reality,micro-projectors and ultrahigh-definition TVs.However,as the LED chip size shrinks to below 20μm,conventional phosphor colour conversion cannot present sufficient luminance and yield to support highresolution displays due to the low absorption cross-section.The emergence of quantum dot(QD)materials is expected to fill this gap due to their remarkable photoluminescence,narrow bandwidth emission,colour tuneability,high quantum yield and nanoscale size,providing a powerful full-colour solution for μ-LED displays.Here,we comprehensively review the latest progress concerning the implementation of μ-LEDs and QDs in display technology,including μ-LED design and fabrication,large-scale μ-LED transfer and QD full-colour strategy.Outlooks on QD stability,patterning and deposition and challenges of μ-LED displays are also provided.Finally,we discuss the advanced applications of QD-based μ-LED displays,showing the bright future of this technology.展开更多
Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tun...Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.展开更多
Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs ...Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).展开更多
It is well known that the p-type AlGaN electron blocking layer(p-EBL) can block hole injection for deep ultraviolet light-emitting diodes(DUV LEDs). The polarization induced electric field in the p-EBL for [0001] orie...It is well known that the p-type AlGaN electron blocking layer(p-EBL) can block hole injection for deep ultraviolet light-emitting diodes(DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately,enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained.展开更多
In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The ...In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect,a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs' jetted mold to further increase the reuse of UV light.The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.展开更多
Semiconductor vertical-cavity surface-emitting lasers(VCSELs)with wavelengths from 491.8 to 565.7 nm,covering most of the‘green gap’,are demonstrated.For these lasers,the same quantum dot(QD)active region was used,w...Semiconductor vertical-cavity surface-emitting lasers(VCSELs)with wavelengths from 491.8 to 565.7 nm,covering most of the‘green gap’,are demonstrated.For these lasers,the same quantum dot(QD)active region was used,whereas the wavelength was controlled by adjusting the cavity length,which is difficult for edge-emitting lasers.Compared with reports in the literature for green VCSELs,our lasers have set a few world records for the lowest threshold,longest wavelength and continuous-wave(CW)lasing at room temperature.The nanoscale QDs contribute dominantly to the low threshold.The emitting wavelength depends on the electron–photon interaction or the coupling between the active layer and the optical field,which is modulated by the cavity length.The green VCSELs exhibit a low-thermal resistance of 915 kW^(−1),which benefits the CW lasing.Such VCSELs are important for small-size,low power consumption full-color displays and projectors.展开更多
A promising approach for the development of effective full-color displays is to combine blue micro LEDs(μLEDs)with color conversion layers.Perovskite nanocrystals(PNCs)are notable for their tolerance to defects and p...A promising approach for the development of effective full-color displays is to combine blue micro LEDs(μLEDs)with color conversion layers.Perovskite nanocrystals(PNCs)are notable for their tolerance to defects and provide excellent photoluminescence quantum yields and high color purity compared to metal chalcogenide quantum dots.The stability of PNCs in ambient conditions and under exposure to blue light can be improved using a SiO;coating.This study proposes a device that could be used for both display and visible light communication(VLC)applications.The semipolar blueμLED array fabricated in this study shows a negligible wavelength shift,indicating a significant reduction in the quantum confined Stark effect.Owing to its shorter carrier lifetime,the semipolar μLED array exhibits an impressive peak 3 dB bandwidth of 655 MHz and a data transmission rate of1.2 Gb/s corresponding to an injection current of 200 m A.The PNC-μLED device assembled from a semipolarμLED array with PNCs demonstrates high color stability and wide color-gamut features,achieving 127.23% and 95.00%of the National Television Standards Committee standard and Rec.2020 on the CIE 1931 color diagram,respectively.These results suggest that the proposed PNC-μLED device is suitable for both display-related and VLC applications.展开更多
This paper proposes a micro-LED backlight module with a distributed Bragg reflector(DBR) structure to achieve excellent micro-LED backlight module quality and uses deep reinforcement learning(DRL) architecture for opt...This paper proposes a micro-LED backlight module with a distributed Bragg reflector(DBR) structure to achieve excellent micro-LED backlight module quality and uses deep reinforcement learning(DRL) architecture for optical design. In the DRL architecture, to solve the computing environment problems of the two extreme structures of micro-scale and macro-scale, this paper proposes an environment control agent and virtual-realistic workflow to ensure that the design environment parameters are highly correlated with experimental results. This paper successfully designed a micro-LED backlight module with a DBR structure by the abovementioned methods.The micro-LED backlight module with a DBR structure improves the uniformity performance by 32% compared with the micro-LED backlight module without DBR, and the design calculation time required by the DRL method is only 17.9% of the traditional optical simulation.展开更多
We propose a flexible white-light system for high-speed visible-light communication(VLC)applications,which consists of a semipolar blue InGaN/GaN single-quantum-well micro-light-emitting diode(LED)on a flexible substr...We propose a flexible white-light system for high-speed visible-light communication(VLC)applications,which consists of a semipolar blue InGaN/GaN single-quantum-well micro-light-emitting diode(LED)on a flexible substrate pumping green CsPbBr3 perovskite quantum-dot(PQD)paper in nanostructure form and red CdSe QD paper.The highest bandwidth for CsPbBr3 PQD paper,229 MHz,is achieved with a blue micro-LED pumping source and a high data transmission rate of 400 Mbps;this is very promising for VLC application.An 817 MHz maximum bandwidth and a 1.5 Gbps transmission speed are attained by the proposed semipolar blue micro-LEDs.The proposed flexible white light system and the high-bandwidth PQD paper could pave the way for VLC wearable devices.展开更多
基金the National Natural Science Foundation of China(62274138)Natural Science Foundation of Fujian Province of China(2023J06012)+2 种基金Science and Technology Plan Project in Fujian Province of China(2021H0011)Fundamental Research Funds for the Central Universities(20720230029)Compound semiconductor technology Collaborative Innovation Platform project of FuXiaQuan National Independent Innovation Demonstration Zone(3502ZCQXT2022005).
文摘In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polarizer.To address this inefficiency and optimize energy utilization,this study presents a high-performance device designed for RGB polarized emissions.The device employs an array of semipolar blueμLEDs with inherent polarization capabilities,coupled with mechanically stretched films of green-emitting CsPbBr3 nanorods and red-emitting CsPbI3-Cs4PbI6 hybrid nanocrystals.The CsPbBr3 nanorods in the polymer film offer intrinsic polarization emission,while the aligned-wire structures formed by the stable CsPbI3-Cs4PbI6 hybrid nanocrystals contribute to substantial anisotropic emissions,due to their high dielectric constant.The resulting device achieved RGB polarization degrees of 0.26,0.48,and 0.38,respectively,and exhibited a broad color gamut,reaching 137.2%of the NTSC standard and 102.5%of the Rec.2020 standard.When compared to a device utilizing c-plane LEDs for excitation,the current approach increased the intensity of light transmitted through the polarizer by 73.6%.This novel fabrication approach for polarized devices containing RGB components holds considerable promise for advancing next-generation display technologies.
基金supports from National Natural Science Foundation of China (62274138,11904302)Natural Science Foundation of Fujian Province of China (2023J06012)+2 种基金Science and Technology Plan Project in Fujian Province of China (2021H0011)Fujian Province Central Guidance Local Science and Technology Development Fund Project In 2022 (2022L3058)Compound semiconductor technology Collaborative Innovation Platform project of FuXiaQuan National Independent Innovation Demonstration Zone (3502ZCQXT2022005)。
文摘Micro-light-emitting diodes(micro-LEDs)with outstanding performance are promising candidates for next-generation displays.To achieve the application of high-resolution displays such as meta-displays,virtual reality,and wearable electronics,the size of LEDs must be reduced to the micro-scale.Thus,traditional technology cannot meet the demand during the processing of micro-LEDs.Recently,lasers with short-duration pulses have attracted attention because of their unique advantages during micro-LED processing such as noncontact processing,adjustable energy and speed of the laser beam,no cutting force acting on the devices,high efficiency,and low cost.Herein,we review the techniques and principles of laser-based technologies for micro-LED displays,including chip dicing,geometry shaping,annealing,laserassisted bonding,laser lift-off,defect detection,laser repair,mass transfer,and optimization of quantum dot color conversion films.Moreover,the future prospects and challenges of laser-based techniques for micro-LED displays are discussed.
基金M.Baeva,A.Vorobyov,V.Neplokh acknowledge the Russian Science Foundation No.22-79-10286(https://rscf.ru/project/22-79-10286/)for supporting silicon substrate processingD.Gets,A.Polushkin and S.Makarov acknowledge the Ministry of Science and Higher Education of the Russian Federation(Project 075-15-2021-589)for supporting perovskite synthesis+1 种基金A.G.Nasibulin and D.V.Krasnikov acknowledge the Russian Science Foundation(grant No.20-73-10256)for supporting synthesis of SWCNTsWe also thank Dr.E.Danilovskiy for valuable engineering advice and N.Zverkov for technical assistance.
文摘Deep-ultraviolet(DUV)sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability,eco-friendliness,high potency,and broad-spectrum sterilization.This study compiles the developments of recent DUV sterilization research.Recent works have investigated DUV sterilization from the perspective of device improvement and principle investigation:one employed a novel epitaxial structure to optimize the performance and fabrication cost of DUV-LEDs and realized potent virus disinfection effects for various respiratory RNA viruses,and another work explained the disinfection phenomenon of SARS-CoV-2 and its variants(Delta and Omicron)in a cryogenic environment.These studies have contributed significantly to the development of DUV sterilization.
基金supported by the National Natural Science Foundation of China (11904302)the Fundamental Research Funds for the Central Universities (Grant No.20720190005)+1 种基金the Major Science and Technology Project of Xiamen in China (3502Z20191015)Hong Kong University of Science and Technology-Foshan Joint Research Program (FSUST19-FYTRI11)
文摘Augmented reality(AR)and virtual reality(VR)are two novel display technologies that are under updates.The essential feature of AR/VR is the full-color display that requires high pixel densities.To generate three-color pixels,the fluorescent color conversion layer inevitably includes green and red pixels.To fabricate such sort of display kits,inkjet printing is a promising way to position the color conversion layers.In this review article,the progress of AR/VR technologies is first reviewed,and in succession,the state of the art of inkjet printing,as well as two key issues-the optimization of ink and the reduction of coffee-ring effects,are introduced.Finally,some potential problems associated with the color converting layer are highlighted.
基金supports from the National Natural Science Foundation of China(11904302,61921005)Major Project of the Science and Technology in Fujian Province of China(2019HZ020013)Major Science and Technology Projects in Xiamen of China(3502Z20191015).
文摘With regard to micro-light-emitting diodes(micro-LEDs),their excellent brightness,low energy consumption,and ultrahigh resolution are significant advantages.However,the large size of traditional inorganic phosphors and the number of side defects have restricted the practical applications of small sized micro-LEDs.Recently,quantum dot(QD)and nonradiative energy transfer(NRET)have been proposed to solve existing problems.QDs possess nanoscale dimensions and high luminous efficiency,and they are suitable for NRET because they are able to nearly contact the micro-LED chip.The NRET between QDs and micro-LED chip further improves the color conversion efficiency(CCE)and effective quantum yield(EQY)of full-color micro-LED devices.In this review,we discuss the NRET mechanism for QD micro-LED devices,and then nano-pillar LED,nano-hole LED,and nano-ring LED are introduced in detail.These structures are beneficial to the NRET between QD and micro-LED,especially nano-ring LED.Finally,the challenges and future envisions have also been described.
文摘This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser（VCSEL）, discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAsmultiple quantum well （MQW） was used to increase the differential gain and photon density in VCSEL. The multiple oxidelayers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode （SM） VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
基金the National Natural Science Foundation of China(62274138,11904302)Science and Technology Plan Project in Fujian Province of China(2021H0011)+2 种基金Fujian Province Central Guidance Local Science and Technology Development Fund Project in 2022(2022L3058)Major Science and Technology Project of Xiamen,China(3502Z20191015)Foshan Hi-tech Zone High-tech Industrialization Entrepreneurial Team Special Guidance Fund in 2022(222019000131).
文摘The evolution of next-generation cellular networks is aimed at creating faster,more reliable solutions.Both the next-generation 6G network and the metaverse require high transmission speeds.Visible light communication(VLC)is deemed an important ancillary technology to wireless communication.It has shown potential for a wide range of applications in next-generation communication.Micro light-emitting diodes(μLEDs)are ideal light sources for high-speed VLC,owing to their high modulation bandwidths.In this review,an overview ofμLEDs for VLC is presented.Methods to improve the modulation bandwidth are discussed in terms of epitaxy optimization,crystal orientation,and active region structure.Moreover,electroluminescent white LEDs,photoluminescent white LEDs based on phosphor or quantum-dot color conversion,andμLED-based detectors for VLC are introduced.Finally,the latest high-speed VLC applications and the application prospects of VLC in 6G are introduced,including underwater VLC and artificial intelligence-based VLC systems.
基金supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012)Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073)Shenzhen Science and Technology Program(JCYJ20220818102809020).
文摘In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.
基金the financial support of Shenzhen Peacock Team funding(KQTD20170810110313773)financial support from the Australian Research Council(ARC)(DP190103316)+1 种基金financial support from the Taiwan science and technology authority,China(107-2221-E-009-113-MY3)financial support from the startup funding of City University of Hong Kong.
文摘Micro-light-emitting diodes(μ-LEDs)are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications,such as mobile phones,wearable watches,virtual/augmented reality,micro-projectors and ultrahigh-definition TVs.However,as the LED chip size shrinks to below 20μm,conventional phosphor colour conversion cannot present sufficient luminance and yield to support highresolution displays due to the low absorption cross-section.The emergence of quantum dot(QD)materials is expected to fill this gap due to their remarkable photoluminescence,narrow bandwidth emission,colour tuneability,high quantum yield and nanoscale size,providing a powerful full-colour solution for μ-LED displays.Here,we comprehensively review the latest progress concerning the implementation of μ-LEDs and QDs in display technology,including μ-LED design and fabrication,large-scale μ-LED transfer and QD full-colour strategy.Outlooks on QD stability,patterning and deposition and challenges of μ-LED displays are also provided.Finally,we discuss the advanced applications of QD-based μ-LED displays,showing the bright future of this technology.
基金Ministry of Science and Technology,Taiwan,China(MOST)(107-2221-E-009-113-MY3,105-2221-E-009-112-MY3)Strait Postdoctoral Foundation of Fujian Province of China
文摘Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.
基金Ministry of Science and Technology,Taiwan,China(107-2221-E-009-113-MY3,108-2221-E-009-113-MY3)National Natural Science Foundation of China(11904302)+1 种基金Hsinchu Science Park Bureau,Ministry of Science and Technology,Taiwan,China(108A08B)Major Science and Technology Project of Xiamen,China(3502Z20191015)。
文摘Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).
基金National Natural Science Foundation of China(NSFC)(51502074)Natural Science Foundation of Hebei Province(F2017202052)+2 种基金Natural Science Foundation of Tianjin City(16JCYBJC16200)Program for Top 100Innovative Talents in Colleges and Universities of Hebei Province(SLRC2017032)Program for 100-Talent-Plan of Hebei Province(E2016100010)
文摘It is well known that the p-type AlGaN electron blocking layer(p-EBL) can block hole injection for deep ultraviolet light-emitting diodes(DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately,enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained.
基金Ministry of Science and Technology,Taiwan,China(MOST)(MOST104-3113-E-009-002-CC2,MOST105-2622-E-009-023-CC2)
文摘In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect,a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs' jetted mold to further increase the reuse of UV light.The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274052,11474235,U1505253)the Major Scientific and Technological Special Project of Guangdong Province(No.2014B010119004)the Science Challenge Project(No.JCKY2016212A503).
文摘Semiconductor vertical-cavity surface-emitting lasers(VCSELs)with wavelengths from 491.8 to 565.7 nm,covering most of the‘green gap’,are demonstrated.For these lasers,the same quantum dot(QD)active region was used,whereas the wavelength was controlled by adjusting the cavity length,which is difficult for edge-emitting lasers.Compared with reports in the literature for green VCSELs,our lasers have set a few world records for the lowest threshold,longest wavelength and continuous-wave(CW)lasing at room temperature.The nanoscale QDs contribute dominantly to the low threshold.The emitting wavelength depends on the electron–photon interaction or the coupling between the active layer and the optical field,which is modulated by the cavity length.The green VCSELs exhibit a low-thermal resistance of 915 kW^(−1),which benefits the CW lasing.Such VCSELs are important for small-size,low power consumption full-color displays and projectors.
基金National Natural Science Foundation of China(11904302,61504112)Major Project of the Science and Technology in Fujian Province of China(2019HZ020013)+2 种基金Industry University Cooperation Project of Science and Technology Department in Fujian Province of China(2018H6022)Major Science and Technology Projects in Xiamen of China(3502Z20191015)Fundamental Research Funds for the Central Universities(20720190005)。
文摘A promising approach for the development of effective full-color displays is to combine blue micro LEDs(μLEDs)with color conversion layers.Perovskite nanocrystals(PNCs)are notable for their tolerance to defects and provide excellent photoluminescence quantum yields and high color purity compared to metal chalcogenide quantum dots.The stability of PNCs in ambient conditions and under exposure to blue light can be improved using a SiO;coating.This study proposes a device that could be used for both display and visible light communication(VLC)applications.The semipolar blueμLED array fabricated in this study shows a negligible wavelength shift,indicating a significant reduction in the quantum confined Stark effect.Owing to its shorter carrier lifetime,the semipolar μLED array exhibits an impressive peak 3 dB bandwidth of 655 MHz and a data transmission rate of1.2 Gb/s corresponding to an injection current of 200 m A.The PNC-μLED device assembled from a semipolarμLED array with PNCs demonstrates high color stability and wide color-gamut features,achieving 127.23% and 95.00%of the National Television Standards Committee standard and Rec.2020 on the CIE 1931 color diagram,respectively.These results suggest that the proposed PNC-μLED device is suitable for both display-related and VLC applications.
文摘This paper proposes a micro-LED backlight module with a distributed Bragg reflector(DBR) structure to achieve excellent micro-LED backlight module quality and uses deep reinforcement learning(DRL) architecture for optical design. In the DRL architecture, to solve the computing environment problems of the two extreme structures of micro-scale and macro-scale, this paper proposes an environment control agent and virtual-realistic workflow to ensure that the design environment parameters are highly correlated with experimental results. This paper successfully designed a micro-LED backlight module with a DBR structure by the abovementioned methods.The micro-LED backlight module with a DBR structure improves the uniformity performance by 32% compared with the micro-LED backlight module without DBR, and the design calculation time required by the DRL method is only 17.9% of the traditional optical simulation.
基金Ministry of Science and Technology,Taiwan(108-2221-E-009-113-MY3,110-2124-M-A49-003-)National Natural Science Foundation of China(11904302)Major Science and Technology Project of Xiamen(3502Z20191015)。
文摘We propose a flexible white-light system for high-speed visible-light communication(VLC)applications,which consists of a semipolar blue InGaN/GaN single-quantum-well micro-light-emitting diode(LED)on a flexible substrate pumping green CsPbBr3 perovskite quantum-dot(PQD)paper in nanostructure form and red CdSe QD paper.The highest bandwidth for CsPbBr3 PQD paper,229 MHz,is achieved with a blue micro-LED pumping source and a high data transmission rate of 400 Mbps;this is very promising for VLC application.An 817 MHz maximum bandwidth and a 1.5 Gbps transmission speed are attained by the proposed semipolar blue micro-LEDs.The proposed flexible white light system and the high-bandwidth PQD paper could pave the way for VLC wearable devices.
