Armed with four different steady-state collisional-radiative(CR) models,we investigated the effect of dielectronic recombination(DR) on the charge-state distribution in laser-produced silicon plasma. To assess this ef...Armed with four different steady-state collisional-radiative(CR) models,we investigated the effect of dielectronic recombination(DR) on the charge-state distribution in laser-produced silicon plasma. To assess this effect,we performed a series of temporally resolved spectra of highly charged Si ions in the extreme ultraviolet region.Ab initio calculations of the DR rate coefficients were done for Si^(6+)–Si^(4+) ions. We also analyzed the evolution of the collisional ionization, radiative recombination, three-body recombination, photo-ionization, and DR rate coefficients as a function of electron temperature. The electron temperature and electron density for different delay times were obtained by comparing the normalized experimental and simulated spectra. The ion fraction and average charge state from the four different CR models were also obtained. The results indicate that the DR process has a greater influence in the stage of plasma evolution that cannot be neglected in plasma diagnoses.展开更多
Correction to:npj Computational Materials https://doi.org/10.1038/s41524-018-0095-6,published online 24 July 2018 In this article the affiliation details for author Yinghao Chu were incorrectly given as‘Department of...Correction to:npj Computational Materials https://doi.org/10.1038/s41524-018-0095-6,published online 24 July 2018 In this article the affiliation details for author Yinghao Chu were incorrectly given as‘Department of Materials Science and Engineering,National Chiao Tung University,30010 Hsinchu,Taiwan’but should have been‘Department of Materials Science and Engineering,National Chiao Tung University,30010 Hsinchu,Taiwan,China’.The original article has been corrected.展开更多
Domain orientations and their volume ratios in ferroelectrics are recognized as a compelling topic recently for domain switching dynamics and domain stability in devices application.Here,an optimized second harmonic g...Domain orientations and their volume ratios in ferroelectrics are recognized as a compelling topic recently for domain switching dynamics and domain stability in devices application.Here,an optimized second harmonic generation method has been explored for ferroelectric domain characterization.Combing a unique theoretical model with azimuth-polarization-dependent second harmonic generation response,the complex domain components and their distributions can be rigidly determined in ferroelectric thin films.Using the proposed model,the domain structures of rhombohedral BiFeO_(3) films with 71°and 109°domain wall,and,tetragonal BiFeO_(3),Pb(Zr_(0.2)Ti_(0.8))O_(3),and BaTiO_(3) ferroelectric thin films are analyzed and the corresponding polarization variants are determined.This work could provide a powerful and all-optical method to track and evaluate the evolution of ferroelectric domains in the ferroelectric-based devices.展开更多
基金supported by the National Key Research and Development Program of China (Grant No. 2017YFA0402300)National Natural Science Foundation of China (NSFC) (Grant Nos. 11904293, 11874051)。
文摘Armed with four different steady-state collisional-radiative(CR) models,we investigated the effect of dielectronic recombination(DR) on the charge-state distribution in laser-produced silicon plasma. To assess this effect,we performed a series of temporally resolved spectra of highly charged Si ions in the extreme ultraviolet region.Ab initio calculations of the DR rate coefficients were done for Si^(6+)–Si^(4+) ions. We also analyzed the evolution of the collisional ionization, radiative recombination, three-body recombination, photo-ionization, and DR rate coefficients as a function of electron temperature. The electron temperature and electron density for different delay times were obtained by comparing the normalized experimental and simulated spectra. The ion fraction and average charge state from the four different CR models were also obtained. The results indicate that the DR process has a greater influence in the stage of plasma evolution that cannot be neglected in plasma diagnoses.
文摘Correction to:npj Computational Materials https://doi.org/10.1038/s41524-018-0095-6,published online 24 July 2018 In this article the affiliation details for author Yinghao Chu were incorrectly given as‘Department of Materials Science and Engineering,National Chiao Tung University,30010 Hsinchu,Taiwan’but should have been‘Department of Materials Science and Engineering,National Chiao Tung University,30010 Hsinchu,Taiwan,China’.The original article has been corrected.
基金This work was financially supported by the National Natural Science Foundation of China(51572233,61574121,11372266 and 11474359)the National Key Research and Development Program of China(2016YFB0501303).
文摘Domain orientations and their volume ratios in ferroelectrics are recognized as a compelling topic recently for domain switching dynamics and domain stability in devices application.Here,an optimized second harmonic generation method has been explored for ferroelectric domain characterization.Combing a unique theoretical model with azimuth-polarization-dependent second harmonic generation response,the complex domain components and their distributions can be rigidly determined in ferroelectric thin films.Using the proposed model,the domain structures of rhombohedral BiFeO_(3) films with 71°and 109°domain wall,and,tetragonal BiFeO_(3),Pb(Zr_(0.2)Ti_(0.8))O_(3),and BaTiO_(3) ferroelectric thin films are analyzed and the corresponding polarization variants are determined.This work could provide a powerful and all-optical method to track and evaluate the evolution of ferroelectric domains in the ferroelectric-based devices.
