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An Efficient HW/SW Design for Text Extraction from Complex Color Image
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作者 Mohamed Amin Ben Atitallah Rostom Kachouri +1 位作者 Ahmed Ben Atitallah hassene mnif 《Computers, Materials & Continua》 SCIE EI 2022年第6期5963-5977,共15页
In the context of constructing an embedded system to help visually impaired people to interpret text,in this paper,an efficient High-level synthesis(HLS)Hardware/Software(HW/SW)design for text extraction using the Gam... In the context of constructing an embedded system to help visually impaired people to interpret text,in this paper,an efficient High-level synthesis(HLS)Hardware/Software(HW/SW)design for text extraction using the Gamma Correction Method(GCM)is proposed.Indeed,the GCM is a common method used to extract text from a complex color image and video.The purpose of this work is to study the complexity of the GCM method on Xilinx ZCU102 FPGA board and to propose a HW implementation as Intellectual Property(IP)block of the critical blocks in this method using HLS flow with taking account the quality of the text extraction.This IP is integrated and connected to the ARM Cortex-A53 as coprocessor in HW/SW codesign context.The experimental results show that theHLS HW/SW implementation of the GCM method on ZCU102 FPGA board allows a reduction in processing time by about 89%compared to the SW implementation.This result is given for the same potency and strength of SW implementation for the text extraction. 展开更多
关键词 Text extraction GCM HW/SW codesign FPGA HLS flow
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Multi-Bias Model for Power Diode Using a Very High Description Language
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作者 hassene mnif Montassar Najari +1 位作者 Hekmet Samet Nouri Masmoudi 《Energy and Power Engineering》 2010年第3期196-202,共7页
This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the... This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the depletion regions in the device to make the used model available over a wide range of testing conditions without remake the parameters extraction procedure. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured current and voltage waveforms reverse recovery at different range of the operation conditions. The model is developed and simulated with the VHDL-AMS language under Ansoft Simplorer&#174;Environment. 展开更多
关键词 Power PIN DIODE VHDL-AMS Modeling HIGH INJECTION Parameter Extraction
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