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Transparent Thermally Tunable Microwave Absorber Prototype Based on Patterned VO2 Film 被引量:1
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作者 Zhengang Lu Yilei Zhang +5 位作者 heyan wang Chao Xia Yunfei Liu Shuliang Dou Yao Li Jiubin Tan 《Engineering》 SCIE EI CAS CSCD 2023年第10期198-206,共9页
Transparent microwave absorbers that exhibit high optical transmittance and microwave absorption capability are ideal,although having a fixed absorption performance limits their applicability.Here,a simple,transparent... Transparent microwave absorbers that exhibit high optical transmittance and microwave absorption capability are ideal,although having a fixed absorption performance limits their applicability.Here,a simple,transparent,and thermally tunable microwave absorber is proposed,based on a patterned vanadium dioxide(VO_(2))film.Numerical calculations and experiments demonstrate that the proposed VO_(2)absorber has a high optical transmittance of 84.9%at 620 nm;its reflection loss at 15.06 GHz can be thermally tuned from–4.257 to–60.179 dB,and near-unity absorption is achieved at 523.750 K.Adjusting only the patterned VO_(2)film duty cycle can change the temperature of near-unity absorption.Our VO_(2)absorber has a simple composition,a high optical transmittance,a thermally tunable microwave absorption performance,a large modulation depth,and an adjustable temperature tuning range,making it promising for application in tunable sensors,thermal emitters,modulators,thermal imaging,bolometers,and photovoltaic devices. 展开更多
关键词 Tunable microwave absorber VO_(2)film Optical transparent Near unity absorption Large modulation depth
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Comprehensive evaluation factor of optoelectronic properties for transparent conductive metallic mesh films 被引量:4
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作者 Yilei ZHANG Jinxuan CAO +2 位作者 Zhengang LU heyan wang Jiubin TAN 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2021年第11期1532-1540,共9页
Finding the optimal optoelectronic properties(zero-order optical transmittance,shielding effectiveness,and stray light uniformity)of metallic mesh is significant for its application in electromagnetic interference shi... Finding the optimal optoelectronic properties(zero-order optical transmittance,shielding effectiveness,and stray light uniformity)of metallic mesh is significant for its application in electromagnetic interference shielding areas.However,there are few relevant studies at present.Based on optoelectronic properties,we propose a comprehensive evaluation factor Q,which is simple in form and can be used to evaluate the mesh with different parameters in a simple and efficient way.The effectivity of Q is verified by comparing the trend of Q values with the evaluation results of the technique for order preference by similarity to ideal solution(TOPSIS).The evaluation factor Q can also be extended to evaluate the optoelectronic properties of different kinds of metallic meshes,which makes it extremely favorable for metallic mesh design and application. 展开更多
关键词 Metallic mesh Technique for order preference by similarity to ideal solution(TOPSIS) Entropy weight(EW) Comprehensive evaluation Transparent conductive films
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Nanodevices engineering and spin transport properties of MnBi_(2)Te_(4) monolayer 被引量:1
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作者 Yipeng An Kun wang +9 位作者 Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing wang Shuhong Ma heyan wang Ruqian Wu Wuming Liu 《npj Computational Materials》 SCIE EI CSCD 2021年第1期414-421,共8页
Two-dimensional(2D)magnetic materials are essential for the development of the next-generation spintronic technologies.Recently,layered van der Waals(vdW)compound MnBi2Te4(MBT)has attracted great interest,and its 2D s... Two-dimensional(2D)magnetic materials are essential for the development of the next-generation spintronic technologies.Recently,layered van der Waals(vdW)compound MnBi2Te4(MBT)has attracted great interest,and its 2D structure has been reported to host coexisting magnetism and topology.Here,we design several conceptual nanodevices based on MBT monolayer(MBT-ML)and reveal their spin-dependent transport properties by means of the first-principles calculations.The pn-junction diodes and sub-3-nm pin-junction field-effect transistors(FETs)show a strong rectifying effect and a spin filtering effect,with an ideality factor n close to 1 even at a reasonably high temperature.In addition,the pip-and nin-junction FETs give an interesting negative differential resistive(NDR)effect.The gate voltages can tune currents through these FETs in a large range.Furthermore,the MBT-ML has a strong response to light.Our results uncover the multifunctional nature of MBT-ML,pave the road for its applications in diverse next-generation semiconductor spin electric devices. 展开更多
关键词 temperature IDEALITY TRANSPORT
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