The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor device.The research solution is to make the software model with finite d...The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor device.The research solution is to make the software model with finite difference time domain(FDTD)solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics effects.The objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology development.The analysis was carried out with the help of MATLAB.The quantum mechanical spatial field on metal-semiconductor stripe structure has been analyzed by FDTD techniques.This emission reveals a characteristic polar radiation distribution of electric dipoles and a wavelength independent of the structure size or the direction of emission;consequently,it is attributed to thermally generate electric dipoles resonating with the longitudinal optical phonon energy.Phonon energy occurs lattice vibration of material by the polarization of light,if the material has rigid structure reflect back the incident light.So,high reflective metal-semiconductor structure always use as photodectors devices in optical fiber communication.No lattice vibration material structure has no phonon effect,so this structure based devices can get high performance any other structure based devices.The transmission and reflection coefficient of metal-semiconductor GaN/Au layer structure compare with GaN/Ti and GaN/Pt structure.Parallel(P)and transverse(S)polarization of light incident on a metal-semiconductor nanolayer structure with IR wavelength.Efficient use of the layer by layer(LbL)method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems.展开更多
The paper mainly focuses on the digital pulse width modulation (DPWM) control techniques for high performance power electronic circuit design. The problem to be solved in this study addresses the DPWM converter design...The paper mainly focuses on the digital pulse width modulation (DPWM) control techniques for high performance power electronic circuit design. The problem to be solved in this study addresses the DPWM converter design for DC to DC conversion process. The control techniques have been utilized the Fuzzy Logic Rules Base method for proposed SIMULINK model of high performance power electronic circuit. The analytical calculations for real circuit design have been completed based on the mathematical modeling of the system. The results from the developed SIMULINK model confirm the target specifications of the high performance condition for power electronic circuit which was met the objective of this study. The numerical results have been carried out with the help of MATLAB/SIMULINK.展开更多
文摘The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor device.The research solution is to make the software model with finite difference time domain(FDTD)solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics effects.The objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology development.The analysis was carried out with the help of MATLAB.The quantum mechanical spatial field on metal-semiconductor stripe structure has been analyzed by FDTD techniques.This emission reveals a characteristic polar radiation distribution of electric dipoles and a wavelength independent of the structure size or the direction of emission;consequently,it is attributed to thermally generate electric dipoles resonating with the longitudinal optical phonon energy.Phonon energy occurs lattice vibration of material by the polarization of light,if the material has rigid structure reflect back the incident light.So,high reflective metal-semiconductor structure always use as photodectors devices in optical fiber communication.No lattice vibration material structure has no phonon effect,so this structure based devices can get high performance any other structure based devices.The transmission and reflection coefficient of metal-semiconductor GaN/Au layer structure compare with GaN/Ti and GaN/Pt structure.Parallel(P)and transverse(S)polarization of light incident on a metal-semiconductor nanolayer structure with IR wavelength.Efficient use of the layer by layer(LbL)method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems.
文摘The paper mainly focuses on the digital pulse width modulation (DPWM) control techniques for high performance power electronic circuit design. The problem to be solved in this study addresses the DPWM converter design for DC to DC conversion process. The control techniques have been utilized the Fuzzy Logic Rules Base method for proposed SIMULINK model of high performance power electronic circuit. The analytical calculations for real circuit design have been completed based on the mathematical modeling of the system. The results from the developed SIMULINK model confirm the target specifications of the high performance condition for power electronic circuit which was met the objective of this study. The numerical results have been carried out with the help of MATLAB/SIMULINK.
