<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200...<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.展开更多
Effects of energetic particle irradiation on low-activation Fe-base alloys are of important concern for the use of the materials as structural components in advanced nuclear power systems such as fusion DEMO reactors....Effects of energetic particle irradiation on low-activation Fe-base alloys are of important concern for the use of the materials as structural components in advanced nuclear power systems such as fusion DEMO reactors. In the present work irradiation experiment of some ferritic alloys with high-energy Ne ions was carried out to study the effects of atomic displacement: damage and nuclear transmutation gases like helium on the microstructures and the mechanical properties. Specimens of a ferritic alloy (9%Cr) and a ODS al-展开更多
In order to investigate the structural stability of fullerene (C60) under swift heavy ion irradiation, the irradiation experiments of thin C60 films were performed with 22 AMeV 56Fe ions delivered by HIRFL. The flux w...In order to investigate the structural stability of fullerene (C60) under swift heavy ion irradiation, the irradiation experiments of thin C60 films were performed with 22 AMeV 56Fe ions delivered by HIRFL. The flux was not more than 1×108 ions/cm2·s to limit thermal effects during irradiation. The irradiation fluences were 5×1010- 8×1013 ions/cm2.展开更多
Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0&...Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0× 10^12 ions/cm2. Then the samples were investigated using Transmission Electron Microscopy （TEM） at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0× 10^12 Pb/cm2 irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0× 10^12 Pb/cm2. Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.展开更多
Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ra...Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300–400°C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.展开更多
In this paper,an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened(ODS) alloy irradiated with high-energy 20Ne ions to different doses at a temperature around 0.5Tm(Tm is the melting poi...In this paper,an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened(ODS) alloy irradiated with high-energy 20Ne ions to different doses at a temperature around 0.5Tm(Tm is the melting point of the alloy) is presented.Investigation with the transmission electron microscopy found that the accelerated growth of voids at grain-boundaries,which is usually a concern in conven-tional Fe-base alloys under conditions of inert-gas implantation,was not observed in the ODS alloy irradiated even to the highest dose(12000 at.ppm Ne).The reason is ascribed to the enhanced recom-bination of point defects and strong trapping of Ne atoms at the interfaces of the nano-scale oxide par-ticles in grains.The study showed that ODS alloys have good resistance to the high-temperature in-ter-granular embrittlement due to inert-gas accumulation,exhibiting prominence of application in harsh situations of considerable helium production at elevated temperatures like in a fusion reactor.展开更多
The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is investigated.The irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering technique.Th...The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is investigated.The irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering technique.The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C60 molecule and damage of C60 films;different vibration modes of C60 molecule have different irradiation sensitivities;the mean efficient damage radius obtained from experimental data is about 1.47 nm,which is in good agreement with thermal spike model prediction.展开更多
基金Supported by National Natural Science Foundation of China （10125522,10475102）.
文摘<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.
文摘Effects of energetic particle irradiation on low-activation Fe-base alloys are of important concern for the use of the materials as structural components in advanced nuclear power systems such as fusion DEMO reactors. In the present work irradiation experiment of some ferritic alloys with high-energy Ne ions was carried out to study the effects of atomic displacement: damage and nuclear transmutation gases like helium on the microstructures and the mechanical properties. Specimens of a ferritic alloy (9%Cr) and a ODS al-
基金The project is supported by National Natural Science Foundation of China(10175084, 10125522.
文摘In order to investigate the structural stability of fullerene (C60) under swift heavy ion irradiation, the irradiation experiments of thin C60 films were performed with 22 AMeV 56Fe ions delivered by HIRFL. The flux was not more than 1×108 ions/cm2·s to limit thermal effects during irradiation. The irradiation fluences were 5×1010- 8×1013 ions/cm2.
基金supported by the National Natural Science Foundation of China (Grant No.10475102)the Scientific Research Foundation of Heze University,China (Grant No.XY09WL02)the Heze University Doctoral Foundation (Grant No.XY10BS02)
文摘Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0× 10^12 ions/cm2. Then the samples were investigated using Transmission Electron Microscopy （TEM） at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0× 10^12 Pb/cm2 irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0× 10^12 Pb/cm2. Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.
基金Supported by the National Science Fund for Distinguished Young Scholars (Grant No. 10125522)the National Natural Science Foundation of China (Grant No. 10475102)the "Xi-Bu-Zhi-Guang" Program of the Chinese Academy of Sciences
文摘Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300–400°C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.
基金the NSAF Joint Foundation of China (Grant No.10376039)the KOFST Program of Korea (South) for Visiting Scientists
文摘In this paper,an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened(ODS) alloy irradiated with high-energy 20Ne ions to different doses at a temperature around 0.5Tm(Tm is the melting point of the alloy) is presented.Investigation with the transmission electron microscopy found that the accelerated growth of voids at grain-boundaries,which is usually a concern in conven-tional Fe-base alloys under conditions of inert-gas implantation,was not observed in the ODS alloy irradiated even to the highest dose(12000 at.ppm Ne).The reason is ascribed to the enhanced recom-bination of point defects and strong trapping of Ne atoms at the interfaces of the nano-scale oxide par-ticles in grains.The study showed that ODS alloys have good resistance to the high-temperature in-ter-granular embrittlement due to inert-gas accumulation,exhibiting prominence of application in harsh situations of considerable helium production at elevated temperatures like in a fusion reactor.
基金supported by the National Natural Science Foundation of China (10835010,10675150,10175084)the National Basic Research Program of China (2010CB832902)
文摘The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is investigated.The irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering technique.The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C60 molecule and damage of C60 films;different vibration modes of C60 molecule have different irradiation sensitivities;the mean efficient damage radius obtained from experimental data is about 1.47 nm,which is in good agreement with thermal spike model prediction.
