Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very sm...Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very small divergence. Besides their high conversion efficiency, a high output voltage is also expected in a laser energy transmission system. Meanwhile,1064 nm InGaAsP multi-junction laser power converters have been developed using p^+-InGaAs/n^+-InGaAs tunnel junctions to connect sub-cells in series to obtain a high output voltage. The triple-junction laser power converter structures are grown on p-type InP substrates by metal-organic chemical vapor deposition(MOCVD), and InGaAsP laser power converters are fabricated by conventional photovoltaic device processing. The room-temperature I–V measurements show that the 1 × 1 cm^2 triplejunction InGaAsP laser power converters demonstrate a conversion efficiency of 32.6% at a power density of 1.1 W/cm^2, with an open-circuit voltage of 2.16 V and a fill factor of 0.74. In this paper, the characteristics of the laser power converters are analyzed and ways to improve the conversion efficiency are discussed.展开更多
基金partially supported by the Jiangsu Province Science Foundation for Youths (No. BK20170431)the National Natural Science Foundation of China (No. 61604171)。
文摘Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very small divergence. Besides their high conversion efficiency, a high output voltage is also expected in a laser energy transmission system. Meanwhile,1064 nm InGaAsP multi-junction laser power converters have been developed using p^+-InGaAs/n^+-InGaAs tunnel junctions to connect sub-cells in series to obtain a high output voltage. The triple-junction laser power converter structures are grown on p-type InP substrates by metal-organic chemical vapor deposition(MOCVD), and InGaAsP laser power converters are fabricated by conventional photovoltaic device processing. The room-temperature I–V measurements show that the 1 × 1 cm^2 triplejunction InGaAsP laser power converters demonstrate a conversion efficiency of 32.6% at a power density of 1.1 W/cm^2, with an open-circuit voltage of 2.16 V and a fill factor of 0.74. In this paper, the characteristics of the laser power converters are analyzed and ways to improve the conversion efficiency are discussed.
