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Electro-Optically Switchable Optical True Delay Lines of Meter-Scale Lengths Fabricated on Lithium Niobate on Insulator Using Photolithography Assisted Chemo-Mechanical Etching 被引量:18
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作者 Jun-xia Zhou Ren-hong Gao +9 位作者 Jintian Lin Min Wang Wei Chu Wen-bo Li Di-feng Yin Li Deng Zhi-wei Fang jian-hao zhang Rong-bo Wu and Ya Cheng 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第8期43-47,共5页
Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-opti... Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm. 展开更多
关键词 lithography waveguide tuning
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Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application
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作者 Xiao-Qin Zhu Rui zhang +4 位作者 Yi-Feng Hu Tian-Shu Lai jian-hao zhang Hua Zou Zhi-Tang Song 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期99-103,共5页
After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data... After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K). 展开更多
关键词 Sb Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application SiO
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