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Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model
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作者 jianbing xu Yuxuan Zhou +3 位作者 Yun Shen Yueting Wang Yinghua Ye Ruiqi Shen 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2024年第3期168-179,共12页
Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement m... Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices. 展开更多
关键词 Ignition enhancement mechanism 1D gas-solid two-phase flow Al/MoO_(3)reactive multilayered films Semiconductor bridge Miniaturized ignition device
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Design,preparation,and characterization of a novel ZnO/CuO/Al energetic diode with dual functionality:Logic and destruction
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作者 Jialu Yang Jiaheng Hu +3 位作者 Yinghua Ye jianbing xu Yan Hu Ruiqi Shen 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2024年第4期57-68,共12页
Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemi... Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately. 展开更多
关键词 Energetic diode ZnO—CuO—Al thermite ZnO/CuO PN junction Electrical explosion performance Self-destructing chips
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Mitigating the negative catalytic effect of CuO by FAS-17 coated Al nanopowder:Isothermal ageing of Al/CuO nanothermite at 71°C and 60%relative humidity
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作者 Fuwei Li Qian Wang +6 位作者 Jian Cheng Zehua Zhang Yuxuan Zhou Keer Ouyang jianbing xu Yinghua Ye Ruiqi Shen 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2024年第4期156-167,共12页
The safety and reliability of weapon systems would be significantly affected by changes in the performance of energetic materials due to ambient temperature and humidity.Nanothermites have promising applications due t... The safety and reliability of weapon systems would be significantly affected by changes in the performance of energetic materials due to ambient temperature and humidity.Nanothermites have promising applications due to their excellent reactivity.Therefore it becomes extremely important to understand their aging and failure process in the environment before using them.Here,the aging and failure process of Al/CuO in 71°C/60%RH were investigated,and showed that CuO nanoparticles negatively catalyze Al nanopowders,resulting in rapid hydration.The anti-aging effect of FAS-17-coated Al nanopowder was also examined.The aging process of Al,Al/CuO,and Al@FAS-17/CuO in high humidity and heat environment were revealed by quasi-in situ SEM and TEM methods.Compared with the aging of pure Al,the Al nanopowder in the nanothermites strongly agglomerated with the CuO nanopowder and hydrated earlier.This may be caused by CuO catalyzed hydration of Al nanopowder.The energy release experiments showed that the performance of Al/CuO decreased rapidly and failed to ignite after 4 h of aging.In contrast,the Al@FAS-17/CuO thermite can achieve long-term stability of up to 60 h in the same environment by simple cladding of FAS-17.It is found that FAS-17 coated Al nanopowder can prevent both particle agglomeration and water erosion,which is an effective means to make nanothermites application in high humidity and heat environment. 展开更多
关键词 Al/CuO nanothermite FAS-17 coating Aging and failure process
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