AgSnO_ 2 electrical contact materials doped with Bi_2O_3,La_2O_3,and TiO_2 were successfully fabricated by the powder metallurgy method under different initial sintering temperatures.The electrical conductivity,densit...AgSnO_ 2 electrical contact materials doped with Bi_2O_3,La_2O_3,and TiO_2 were successfully fabricated by the powder metallurgy method under different initial sintering temperatures.The electrical conductivity,density,hardness,and contact resistance of the Ag Sn O_2/Bi_2O_3,AgSnO_2/La_2O_3,and AgSnO_2/Ti O_2 contact materials were measured and analyzed.The arc-eroded surface morphologies of the doped AgSnO_2 contact materials were investigated by scanning electron microscopy(SEM).The effects of the initial sintering temperature on the physical properties and electrical contact properties of the doped AgSnO_2 contact materials were discussed.The results indicate that the physical properties can be improved and the contact resistance of the AgSnO_2 contact materials can be substantially reduced when the materials are sintered under their optimal initial sintering temperatures.展开更多
Transient receptor potential vanilloid subtype 1 (TRPV1) is a polymodel sensory receptor and can be activated by moderate temperature (≥ 43 ℃). Though extensive researches on the heat-activation mechanism revealed s...Transient receptor potential vanilloid subtype 1 (TRPV1) is a polymodel sensory receptor and can be activated by moderate temperature (≥ 43 ℃). Though extensive researches on the heat-activation mechanism revealed some key elements that participate in the heat-sensation pathway, the detailed thermal-gating mechanism of TRPV1 is still unclear. We investigate the heat-activation process of TRPV1 channel using the molecular dynamics simulation method at different temperatures. It is found that the favored state of the supposed upper gate of TRPV1 cannot form constriction to ion permeation. Oscillation of S5 helix originated from thermal fluctuation and forming/breaking of two key hydrogen bonds can transmit to S6 helix through the hydrophobic contact between S5 and S6 helix. We propose that this is the pathway from heat sensor of TRPV1 to the opening of the lower gate. The heat-activation mechanism of TRPV1 presented in this work can help further functional study of TRPV1 channel.展开更多
基金financially supported by the National Natural Science Foundation of China (No.51777057)the Natural Science Foundation of Hebei Province, China (No.E2016202106)the Science and Technology Research Project of Colleges and Universities in Hebei Province, China (No.ZD2016078)
文摘AgSnO_ 2 electrical contact materials doped with Bi_2O_3,La_2O_3,and TiO_2 were successfully fabricated by the powder metallurgy method under different initial sintering temperatures.The electrical conductivity,density,hardness,and contact resistance of the Ag Sn O_2/Bi_2O_3,AgSnO_2/La_2O_3,and AgSnO_2/Ti O_2 contact materials were measured and analyzed.The arc-eroded surface morphologies of the doped AgSnO_2 contact materials were investigated by scanning electron microscopy(SEM).The effects of the initial sintering temperature on the physical properties and electrical contact properties of the doped AgSnO_2 contact materials were discussed.The results indicate that the physical properties can be improved and the contact resistance of the AgSnO_2 contact materials can be substantially reduced when the materials are sintered under their optimal initial sintering temperatures.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.81830061 and 11605038)the Natural Science Foundation of Hebei Province of China(Grant No.A2020202007)the Natural Science Foundation of Tianjin of China(Grant No.19JCYBJC28300).
文摘Transient receptor potential vanilloid subtype 1 (TRPV1) is a polymodel sensory receptor and can be activated by moderate temperature (≥ 43 ℃). Though extensive researches on the heat-activation mechanism revealed some key elements that participate in the heat-sensation pathway, the detailed thermal-gating mechanism of TRPV1 is still unclear. We investigate the heat-activation process of TRPV1 channel using the molecular dynamics simulation method at different temperatures. It is found that the favored state of the supposed upper gate of TRPV1 cannot form constriction to ion permeation. Oscillation of S5 helix originated from thermal fluctuation and forming/breaking of two key hydrogen bonds can transmit to S6 helix through the hydrophobic contact between S5 and S6 helix. We propose that this is the pathway from heat sensor of TRPV1 to the opening of the lower gate. The heat-activation mechanism of TRPV1 presented in this work can help further functional study of TRPV1 channel.
