Abiotic stress,including flooding,seriously affects the normal growth and development of plants.Mulberry(Morus alba),a species known for its flood resistance,is cultivated worldwide for economic purposes.The transcrip...Abiotic stress,including flooding,seriously affects the normal growth and development of plants.Mulberry(Morus alba),a species known for its flood resistance,is cultivated worldwide for economic purposes.The transcriptomic analysis has identified numerous differentially expressed genes(DEGs)involved in submergence tolerance in mulberry plants.However,a comprehensive analyses of metabolite types and changes under flooding stress in mulberry remain unreported.A non-targeted metabolomic analysis utilizing liquid chromatographytandem mass spectrometry(LC-MS/MS)was conducted to further investigate the effects of flooding stress on mulberry.A total of 1,169 metabolites were identified,with 331 differentially accumulated metabolites(DAMs)exhibiting up-regulation in response to flooding stress and 314 displaying down-regulation.Pathway enrichment analysis identified significant modifications in many metabolic pathways due to flooding stress,including amino acid biosynthesis and metabolism and flavonoid biosynthesis.DAMs and DEGs are significantly enriched in the Kyoto Encyclopedia of Genes and Genomes(KEGG)pathways for amino acid,phenylpropanoid and flavonoid synthesis.Furthermore,metabolites such as methyl jasmonate,sucrose,and D-mannose 6-phosphate accumulated in mulberry leaves post-flooding stress.Therefore,genes and metabolites associated with these KEGG pathways are likely to exert a significant influence on mulberry flood tolerance.This study makes a substantial contribution to the comprehension of the underlying mechanisms implicated in the adaptation of mulberry plants to submergence.展开更多
It is important to understand the research trends and hotspots of global soil nutrient migration and control. Based on the core collection of WOS (Web of Science), citespace knowledge map analysis tool was used to ana...It is important to understand the research trends and hotspots of global soil nutrient migration and control. Based on the core collection of WOS (Web of Science), citespace knowledge map analysis tool was used to analyze the number of publications, cooperation networks, disciplines, research hotspots and frontier trends on nutrient migration in soil. The results showed that: the number of publications on the study of soil nutrient migration showed a good growth from 1990 to 2021. 173 countries had cooperative relationships. The number of articles published in the United States and China was significantly higher than that in other countries, while Chinese Academy of Sciences was the institution with the largest number of publications. It was a comprehensive system that permeates with agriculture, environmental science, botany and other disciplines. The research of nutrient migration in soil mainly focused on the measures of microbial community in different land types to promote nutrient transformation, improve soil fertility and reduce nutrient loss. In the future, the research trends will be the management measures of soil nutrient loss, the relationship between the change of soil nutrient and plant community diversity, and the remediation of agricultural contaminated soil. Through the above analysis, there was an overall understanding of soil nutrient migration. The research on nutrient migration may continue to increase in the future. It is suggested that Chinese research institutions, teams and universities need to strengthen international cooperation, and speed up their integration with the international community.展开更多
Metal-free catalyst for photocatalytic production of H_(2)O_(2)is highly desirable with the long-term vision of artificial photosynthesis of solar fuel.In particular,the specific chemical bonds for selective H_(2)O_(2...Metal-free catalyst for photocatalytic production of H_(2)O_(2)is highly desirable with the long-term vision of artificial photosynthesis of solar fuel.In particular,the specific chemical bonds for selective H_(2)O_(2)photosynthesis via 2e–oxygen reduction reactions(ORR)remain to be explored for understanding the forming mechanism of active sites.Herein,we report a facile doping method to introduce boron-nitrogen(B–N)bonds into the structure of graphitic carbon nitride(g-C_(3)N_(4))nanosheets(denoted as BCNNS)to provide significant photocatalytic activity,selectivity and stability.The theoretical calculation and experimental results reveal that the electron-deficient B–N units serving as electron acceptors improve photogenerated charge separation and transfer.The units are also proved to be superior active sites for selective O_(2)adsorption and activation,reducing the energy barrier for*OOH formation,and thereby enabling an efficient 2e–ORR pathway to H_(2)O_(2).Consequently,with only bare loss of activity during repeated cycles,the optimal H2O2 production rate by BCNNS photocatalysts reaches 1.16 mmol·L^(–1)·h^(–1)under 365 nm-monochrome light emitting diode(LED365nm)irradiation,increasing nearly 2–5 times as against the state-of-art metal-free photocatalysts.This work gives the first example of applying B–N bonds to enhance the photocatalytic H_(2)O_(2)production as well as unveiling the underlying reaction pathway for efficient solar-energy transformations.展开更多
Mott insulator material,as a kind of strongly correlated electronic system with the characteristic of a drastic change in electrical conductivity,shows excellent application prospects in neuromorphological calculation...Mott insulator material,as a kind of strongly correlated electronic system with the characteristic of a drastic change in electrical conductivity,shows excellent application prospects in neuromorphological calculations and has attracted significant attention in the scientific community.Especially,computing systems based on Mott insulators can overcome the bottleneck of separated data storage and calculation in traditional artificial intelligence systems based on the von Neumann architecture,with the potential to save energy,increase operation speed,improve integration,scalability,and three-dimensionally stacked,and more suitable to neuromorphic computing than a complementary metal-oxide-semiconductor.In this review,we have reviewed Mott insulator materials,methods for driving Mott insulator transformation(pressure-,voltage-,and temperature-driven approaches),and recent relevant applications in neuromorphic calculations.The results in this review provide a path for further study of the applications in neuromorphic calculations based on Mott insulator materials and the related devices.展开更多
The deformation of aquitard is the main contribution to land subsidence in the North China Plain, and the water released from aquitard compaction may be a large portion of the exploited groundwater. In this study, the...The deformation of aquitard is the main contribution to land subsidence in the North China Plain, and the water released from aquitard compaction may be a large portion of the exploited groundwater. In this study, the consolidation test was employed to understand the mechanics on the drainage and deformation of aquitard. The results suggested the strain of aquitard mainly resulted from the difference of hydraulic head between aquifers. And it was decreased with depth of aquitard at the same hydrodynamic pressure. In contrast with the interbed within aquifers, the aquitard was deformable when it was compressed. The weakly bound water was significantly released when the void ratio was about 0.44–0.45, and the EC of water released from the aquitard was decreased with the compacting process. The data from the consolidation test suggested that the pumping of groundwater from aquifer III might be less contribution to the land subsidence with respect to other aquifers in the future.展开更多
Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(...Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(3)(BFO)thin film as the functional layer.The inorganic single crystalline FTJs grown on rigid perovskite substrates at high temperatures are integrated with the flexible plastic substrates,by using the water-soluble Sr_(3)Al_(2)O_(6)(SAO)as the sacrificial layer and the following transfer.The transferred freestanding BFO thin film exhibits excellent ferroelectric properties.Moreover,the memristive properties and the brain-like synaptic learning performance of the flexible FTJs are investigated.The results show that multilevel resistance states were maintained well of the flexible artificial synapse,together with their stable synaptic learning properties.Our work indicates the promising opportunity of ferroelectric thin film based flexible synapse used in the future neuromorphic computing system.展开更多
The Erdaogou gold deposit is located in the conjuncture of North China Carton and Xingmeng orogenic belt.The ore-forming process of Erdaogou gold deposit is divided into three stages(ⅠtoⅢ),which are quartz-pyrite st...The Erdaogou gold deposit is located in the conjuncture of North China Carton and Xingmeng orogenic belt.The ore-forming process of Erdaogou gold deposit is divided into three stages(ⅠtoⅢ),which are quartz-pyrite stage(stage I),quartz-polymetallic sulfide stage(stage II)and quartz-calcite stage(stage III).Two types of fluid inclusions is distinguished in the ore-forming stage,i.e.,aqueous type(W-type)and aqueous-carbonic type(C-type)inclusions.From the stageⅠtoⅢ,the homogenization temperature of fluid inclusions are respectively 334-395,214-364 and 172-272℃,with salinities of 7.72 wt.%-11.23 wt.%NaCl equiv.,0.20 wt.%-23.18 wt.%NaCl equiv.,and 0.35 wt.%to 5.25 wt.%NaCl equiv.The ore-forming fluids of the Erdaogou deposit have the characteristics of medium-low temperatures,moderate salinities and low densities.And the fluids belong to the CO,-H2O-NaCl system.The values ofδ34SV-CDT in sulphide samples at different stages(stages I to III)are between-2.2‰ to 2.3‰,indicating sulfur source from magma volatiles or subvolcanic rock leaching.The lead isotopes suggest that ore-forming metals may be derived from a mixture of lower crust and mantle materials.Oxygen and hydrogen isotope data at Erdaogou indicate that magmatic fluid and meteoric water may both be involved in the hydrothermal system.Based on the geological characteris-tics,fluid inclusion results,stable and radiogenic isotope results of Erdaogou gold deposit,we believe that the temperature decrease,fluid boiling are the key factors leading to the ore precipitation and the genetic type of Erdaogou gold deposit is low-sulfidation epithermal deposit.展开更多
The Liao-Ji belt(LJB)is one of the Paleoproterozoic tectonic belts located in the North China Craton.A large number of Paleoproterozoic meta-volcanic-sedimentary rock and intrusive rocks are preserved in the LJB,which...The Liao-Ji belt(LJB)is one of the Paleoproterozoic tectonic belts located in the North China Craton.A large number of Paleoproterozoic meta-volcanic-sedimentary rock and intrusive rocks are preserved in the LJB,which provide reliable carriers for the study of the Paleoproterozoic tectonic evolution of the North China Craton.The Paleoproterozoic intrusive rock in the LJB can be divided into the following seven types:syenogranite,quartz diorite,porphyry granite,migmatitic granite,sye-nite,metamorphic plutonic rock,and granitic pegmatite and metagabbro(metamorphic diabase).Zir-con U-Pb dating of 15 samples from intrusive rocks was carried out in this study.The chronology framework of the Paleoproterozoic intrusive rock in the LJB was established,and the magmatism of intrusive rocks can be divided into three stages:2200 to 2110,2010 to 1937,1900 to 1820 Ma.The chronological framework supported the evolution model of subduction accretionary arc-continent colli-sion in the LJB effectively.Combined with previous geochemical work,it was a passive continental margin environment at approximately 2200 Ma,and then transformed into and active continental margin.The bimodal intrusive rocks between 2180 and 2150 Ma indicated a back-arc tension envi-ronment which lasted until approximately 2110 Ma with a large number of basic intrusive rocks.And then the back-arc basin began to contract and the magmatic activities were reduced,with only a small number of intrusive rock activities occurring at approximately 2040,2010 and 1937 Ma.After the orogenic activities,there was a post-orogenic extension stage from 1900 to 1820 Ma.Magmatic activi-ties caused by the environmental extension started to occur more frequently and subsequently resulted in the large-scale intrusive rocks in eastern Liaoning.展开更多
Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional p...Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor(CMOS)-compatibility and limited scalability.Next-generation cost-efficient,high-density FeRAM shall therefore rely on a material revolution.Since the discovery of ferroelectricity in Si:HfO_(2)thin films in 2011,HfO_(2)-based materials have aroused widespread interest in the field of FeRAM,because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm.A review on this new class of ferroelectric materials is therefore of great interest.In this paper,the most appealing topics about ferroelectric HfO_(2)-based materials including origins of ferroelectricity,advantageous material properties,and current and potential applications in FeRAM,are briefly reviewed.展开更多
Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.Ho...Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.However,due to the high dielectric loss of traditional ferroelectric materials,the durability of ferroelectric memristors and Si based integration have a great challenge.Here,we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO_(3)(BTO)-CeO_(2) films.The BTO-CeO_(2) memristors exhibit a stable resistance switching behavior at a high temperature of 100℃ due to higher Curie temperatures of BTO-CeO_(2) films with in-plane compressive strain.And the endurance of the device can reach the order of magnitude of 1×106 times.More importantly,the device has excellent functions for simulating artificial synaptic behavior,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression,spike-time-dependent plasticity,and short and long-term plasticity.Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model,in which recognition accuracy of digital can reach 86.78%after 20 training iterations.These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.展开更多
基金The funding for this research was provided by the General Program of Chongqing Natural Science Foundation(No.cstc2020jcyj-msxmX0073)Scientific and Technological Research Program of Chongqing Municipal Education Commission(Nos.KJQN202001209,KJZD-K202301206)Chongqing Graduate Research Innovation Project(CYS22698).
文摘Abiotic stress,including flooding,seriously affects the normal growth and development of plants.Mulberry(Morus alba),a species known for its flood resistance,is cultivated worldwide for economic purposes.The transcriptomic analysis has identified numerous differentially expressed genes(DEGs)involved in submergence tolerance in mulberry plants.However,a comprehensive analyses of metabolite types and changes under flooding stress in mulberry remain unreported.A non-targeted metabolomic analysis utilizing liquid chromatographytandem mass spectrometry(LC-MS/MS)was conducted to further investigate the effects of flooding stress on mulberry.A total of 1,169 metabolites were identified,with 331 differentially accumulated metabolites(DAMs)exhibiting up-regulation in response to flooding stress and 314 displaying down-regulation.Pathway enrichment analysis identified significant modifications in many metabolic pathways due to flooding stress,including amino acid biosynthesis and metabolism and flavonoid biosynthesis.DAMs and DEGs are significantly enriched in the Kyoto Encyclopedia of Genes and Genomes(KEGG)pathways for amino acid,phenylpropanoid and flavonoid synthesis.Furthermore,metabolites such as methyl jasmonate,sucrose,and D-mannose 6-phosphate accumulated in mulberry leaves post-flooding stress.Therefore,genes and metabolites associated with these KEGG pathways are likely to exert a significant influence on mulberry flood tolerance.This study makes a substantial contribution to the comprehension of the underlying mechanisms implicated in the adaptation of mulberry plants to submergence.
文摘It is important to understand the research trends and hotspots of global soil nutrient migration and control. Based on the core collection of WOS (Web of Science), citespace knowledge map analysis tool was used to analyze the number of publications, cooperation networks, disciplines, research hotspots and frontier trends on nutrient migration in soil. The results showed that: the number of publications on the study of soil nutrient migration showed a good growth from 1990 to 2021. 173 countries had cooperative relationships. The number of articles published in the United States and China was significantly higher than that in other countries, while Chinese Academy of Sciences was the institution with the largest number of publications. It was a comprehensive system that permeates with agriculture, environmental science, botany and other disciplines. The research of nutrient migration in soil mainly focused on the measures of microbial community in different land types to promote nutrient transformation, improve soil fertility and reduce nutrient loss. In the future, the research trends will be the management measures of soil nutrient loss, the relationship between the change of soil nutrient and plant community diversity, and the remediation of agricultural contaminated soil. Through the above analysis, there was an overall understanding of soil nutrient migration. The research on nutrient migration may continue to increase in the future. It is suggested that Chinese research institutions, teams and universities need to strengthen international cooperation, and speed up their integration with the international community.
基金supported by the Jiangsu Provincial Double-Innovation Doctor Program(JSSCBS20210996).
文摘Metal-free catalyst for photocatalytic production of H_(2)O_(2)is highly desirable with the long-term vision of artificial photosynthesis of solar fuel.In particular,the specific chemical bonds for selective H_(2)O_(2)photosynthesis via 2e–oxygen reduction reactions(ORR)remain to be explored for understanding the forming mechanism of active sites.Herein,we report a facile doping method to introduce boron-nitrogen(B–N)bonds into the structure of graphitic carbon nitride(g-C_(3)N_(4))nanosheets(denoted as BCNNS)to provide significant photocatalytic activity,selectivity and stability.The theoretical calculation and experimental results reveal that the electron-deficient B–N units serving as electron acceptors improve photogenerated charge separation and transfer.The units are also proved to be superior active sites for selective O_(2)adsorption and activation,reducing the energy barrier for*OOH formation,and thereby enabling an efficient 2e–ORR pathway to H_(2)O_(2).Consequently,with only bare loss of activity during repeated cycles,the optimal H2O2 production rate by BCNNS photocatalysts reaches 1.16 mmol·L^(–1)·h^(–1)under 365 nm-monochrome light emitting diode(LED365nm)irradiation,increasing nearly 2–5 times as against the state-of-art metal-free photocatalysts.This work gives the first example of applying B–N bonds to enhance the photocatalytic H_(2)O_(2)production as well as unveiling the underlying reaction pathway for efficient solar-energy transformations.
基金This work was financially supported by the National Key Research&Development Plan“Nano Frontier”Key Special Project(No.2021YFA1200502)Cultivation projects of national major Research&Development project(No.92164109)+11 种基金the National Natural Science Foundation of China(Nos.61874158,62004056,and 62104058)Special project of strategic leading science and technology of Chinese Academy of Sciences(No.XDB44000000-7)Hebei Basic Research Special Key Project(No.F2021201045)Support Program for the Top Young Talents of Hebei Province(No.70280011807)Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018)Interdisciplinary Research Program of Natural Science of Hebei University(No.DXK202101)Institute of Life Sciences and Green Development(No.521100311)Natural Science Foundation of Hebei Province(Nos.F2022201054 and F2021201022)Outstanding Young Scientific Research and Innovation Team of Hebei University(No.605020521001)Special Support Funds for National High Level Talents(No.041500120001)Advanced Talents Incubation Program of the Hebei University(Nos.521000981426,521100221071,and 521000981363)Funded by Science and Technology Project of Hebei Education Department(Nos.QN2020178 and QN2021026).
文摘Mott insulator material,as a kind of strongly correlated electronic system with the characteristic of a drastic change in electrical conductivity,shows excellent application prospects in neuromorphological calculations and has attracted significant attention in the scientific community.Especially,computing systems based on Mott insulators can overcome the bottleneck of separated data storage and calculation in traditional artificial intelligence systems based on the von Neumann architecture,with the potential to save energy,increase operation speed,improve integration,scalability,and three-dimensionally stacked,and more suitable to neuromorphic computing than a complementary metal-oxide-semiconductor.In this review,we have reviewed Mott insulator materials,methods for driving Mott insulator transformation(pressure-,voltage-,and temperature-driven approaches),and recent relevant applications in neuromorphic calculations.The results in this review provide a path for further study of the applications in neuromorphic calculations based on Mott insulator materials and the related devices.
基金supported by the National Basic Research Program of China (No. 2010CB428803) the National Natural Science Foundation of China (No. 41272252)
文摘The deformation of aquitard is the main contribution to land subsidence in the North China Plain, and the water released from aquitard compaction may be a large portion of the exploited groundwater. In this study, the consolidation test was employed to understand the mechanics on the drainage and deformation of aquitard. The results suggested the strain of aquitard mainly resulted from the difference of hydraulic head between aquifers. And it was decreased with depth of aquitard at the same hydrodynamic pressure. In contrast with the interbed within aquifers, the aquitard was deformable when it was compressed. The weakly bound water was significantly released when the void ratio was about 0.44–0.45, and the EC of water released from the aquitard was decreased with the compacting process. The data from the consolidation test suggested that the pumping of groundwater from aquifer III might be less contribution to the land subsidence with respect to other aquifers in the future.
基金This work was financially supported by the National Natural Science Foundation of China （Nos. 61306098, 61674050 and 61422407）, the Natural Science Foundation of Hebei Province （Nos. E2012201088 and E2013201176）, the Science Research Program of University in Hebei Province （No. ZH2012019）, Top-notch Youth Project of University in Hebei Province （No. BJ2014008）, the project of enhancement comprehensive strength of the Midwest universities of Hebei University, the Outstanding Youth Project of Hebei Province （No. F2016201220）, the outstanding Youth Cultivation Project of Hebei University （No. 2015JQY01）, Project of science and technology activities for overseas researcher （No. CL201602）, Post-graduate＇s Innovation Fund Project of Hebei University （No. X201714）, and Baoding Nanyang Research Institute - New Material Technology Platform （17H03）.
基金the National Natural Science Foundation of China(61674050 and 61874158)the Outstanding Youth Project of Hebei Province(F2016201220)+6 种基金the Outstanding Youth Cultivation Project of Hebei University(2015JQY01)the Training and Introduction of High-level Innovative Talents of Hebei University(801260201300)the Project of Science and Technology Activities for Overseas Researcher(CL 201602)the Project of Distinguished Young of Hebei Province(A2018201231)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Hundred Persons Plan of Hebei Province(E2018050004 and E2018050003)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)。
基金financially supported by the National Key R&D Plan“Nano Frontier”Key Special Project(2021YFA1200502)the Cultivation Projects of National Major R&D Project(92164109)+9 种基金the National Natural Science Foundation of China(61874158,62004056 and 62104058)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7)Hebei Basic Research Special Key Project(F2021201045)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)the Outstanding Young Scientific Research and Innovation Team of Hebei University(605020521001)the Special Support Funds for National High Level Talents(041500120001)the High-level Talent Research Startup Project of Hebei University(521000981426)the Science and Technology Project of Hebei Education Department(QN2020178 and QN2021026)the Post-graduate’s Innovation Fund Project of Hebei Province(CXZZBS2022020)。
基金the National Natural Science Foundation of China(No.62004056)the Hundred Persons Plan of Hebei Province(Nos.E2018050004 and E2018050003)+5 种基金This work was also supported by National Natural Science Foundation of China(Nos.61674050 and 61874158)the Outstanding Youth Project of Hebei Province(No.F2016201220)the Project of Distinguished Young of Hebei Province(No.A2018201231)he Support Program for the Top Young Talents of Hebei Province(No.70280011807)the Training and Introduction of High-level Innovative Talents of Hebei University(No.801260201300)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018).
文摘Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(3)(BFO)thin film as the functional layer.The inorganic single crystalline FTJs grown on rigid perovskite substrates at high temperatures are integrated with the flexible plastic substrates,by using the water-soluble Sr_(3)Al_(2)O_(6)(SAO)as the sacrificial layer and the following transfer.The transferred freestanding BFO thin film exhibits excellent ferroelectric properties.Moreover,the memristive properties and the brain-like synaptic learning performance of the flexible FTJs are investigated.The results show that multilevel resistance states were maintained well of the flexible artificial synapse,together with their stable synaptic learning properties.Our work indicates the promising opportunity of ferroelectric thin film based flexible synapse used in the future neuromorphic computing system.
基金This research was supported by the National Key Development Project(No.2018YFC0603804)China Geological Survey(No.DD20190042)Opening Foundation of Key Laboratory of Mineral Resources Evaluation in Northeast Asia,Ministry of Natural Resources.
文摘The Erdaogou gold deposit is located in the conjuncture of North China Carton and Xingmeng orogenic belt.The ore-forming process of Erdaogou gold deposit is divided into three stages(ⅠtoⅢ),which are quartz-pyrite stage(stage I),quartz-polymetallic sulfide stage(stage II)and quartz-calcite stage(stage III).Two types of fluid inclusions is distinguished in the ore-forming stage,i.e.,aqueous type(W-type)and aqueous-carbonic type(C-type)inclusions.From the stageⅠtoⅢ,the homogenization temperature of fluid inclusions are respectively 334-395,214-364 and 172-272℃,with salinities of 7.72 wt.%-11.23 wt.%NaCl equiv.,0.20 wt.%-23.18 wt.%NaCl equiv.,and 0.35 wt.%to 5.25 wt.%NaCl equiv.The ore-forming fluids of the Erdaogou deposit have the characteristics of medium-low temperatures,moderate salinities and low densities.And the fluids belong to the CO,-H2O-NaCl system.The values ofδ34SV-CDT in sulphide samples at different stages(stages I to III)are between-2.2‰ to 2.3‰,indicating sulfur source from magma volatiles or subvolcanic rock leaching.The lead isotopes suggest that ore-forming metals may be derived from a mixture of lower crust and mantle materials.Oxygen and hydrogen isotope data at Erdaogou indicate that magmatic fluid and meteoric water may both be involved in the hydrothermal system.Based on the geological characteris-tics,fluid inclusion results,stable and radiogenic isotope results of Erdaogou gold deposit,we believe that the temperature decrease,fluid boiling are the key factors leading to the ore precipitation and the genetic type of Erdaogou gold deposit is low-sulfidation epithermal deposit.
基金This study was financially supported by the National Key Research and Development Program(No.2018YFC0603804)the China Geological Survey(Nos.DD20190042,DD20190039 and DD20160048-05).
文摘The Liao-Ji belt(LJB)is one of the Paleoproterozoic tectonic belts located in the North China Craton.A large number of Paleoproterozoic meta-volcanic-sedimentary rock and intrusive rocks are preserved in the LJB,which provide reliable carriers for the study of the Paleoproterozoic tectonic evolution of the North China Craton.The Paleoproterozoic intrusive rock in the LJB can be divided into the following seven types:syenogranite,quartz diorite,porphyry granite,migmatitic granite,sye-nite,metamorphic plutonic rock,and granitic pegmatite and metagabbro(metamorphic diabase).Zir-con U-Pb dating of 15 samples from intrusive rocks was carried out in this study.The chronology framework of the Paleoproterozoic intrusive rock in the LJB was established,and the magmatism of intrusive rocks can be divided into three stages:2200 to 2110,2010 to 1937,1900 to 1820 Ma.The chronological framework supported the evolution model of subduction accretionary arc-continent colli-sion in the LJB effectively.Combined with previous geochemical work,it was a passive continental margin environment at approximately 2200 Ma,and then transformed into and active continental margin.The bimodal intrusive rocks between 2180 and 2150 Ma indicated a back-arc tension envi-ronment which lasted until approximately 2110 Ma with a large number of basic intrusive rocks.And then the back-arc basin began to contract and the magmatic activities were reduced,with only a small number of intrusive rock activities occurring at approximately 2040,2010 and 1937 Ma.After the orogenic activities,there was a post-orogenic extension stage from 1900 to 1820 Ma.Magmatic activi-ties caused by the environmental extension started to occur more frequently and subsequently resulted in the large-scale intrusive rocks in eastern Liaoning.
基金the Singapore National Research Foundation under CRP Award No.NRF-CRP10-2012-02.
文摘Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor(CMOS)-compatibility and limited scalability.Next-generation cost-efficient,high-density FeRAM shall therefore rely on a material revolution.Since the discovery of ferroelectricity in Si:HfO_(2)thin films in 2011,HfO_(2)-based materials have aroused widespread interest in the field of FeRAM,because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm.A review on this new class of ferroelectric materials is therefore of great interest.In this paper,the most appealing topics about ferroelectric HfO_(2)-based materials including origins of ferroelectricity,advantageous material properties,and current and potential applications in FeRAM,are briefly reviewed.
基金financially supported by the National Natural Science Foundation of China(51901118,51871137,12174237,and 52171183)the 1331 Engineering of Shanxi Province+1 种基金the Research Project Supported by Shanxi Scholarship Council of China(2021-093)the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(2020L0237)。
基金supported by the National key R&D plan"nano frontier"key special project(No.2021YFA1200502)Cultivation projects of national major R&D project(No.92164109)+11 种基金the National Natural Science Foundation of China(Nos.61874158,62004056,and 62104058)Special project of strategic leading science and technology of Chinese Academy of Sciences(No.XDB44000000-7)Hebei Basic Research Special Key Project(No.F2021201045)the Support Program for the Top Young Talents of Hebei Province(No.70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018)Interdisciplinary Research Program of Natural Science of Hebei University(No.DXK202101)Institute of Life Sciences and Green Development(No.521100311)Natural Science Foundation of Hebei Province(Nos.F2022201054 and F2021201022)Outstanding young scientific research and innovation team of Hebei University(No.605020521001)Special support funds for national high level talents(No.041500120001)Advanced Talents Incubation Program of Hebei University(Nos.521000981426,521100221071,and 521000981363)Science and Technology Project of Hebei Education Department(Nos.QN2020178 and QN2021026).
文摘Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.However,due to the high dielectric loss of traditional ferroelectric materials,the durability of ferroelectric memristors and Si based integration have a great challenge.Here,we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO_(3)(BTO)-CeO_(2) films.The BTO-CeO_(2) memristors exhibit a stable resistance switching behavior at a high temperature of 100℃ due to higher Curie temperatures of BTO-CeO_(2) films with in-plane compressive strain.And the endurance of the device can reach the order of magnitude of 1×106 times.More importantly,the device has excellent functions for simulating artificial synaptic behavior,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression,spike-time-dependent plasticity,and short and long-term plasticity.Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model,in which recognition accuracy of digital can reach 86.78%after 20 training iterations.These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.
