Si wafer(N-type,P-doped,1kΩ-cm)was implanted with ^(111)In by nuclear reaction recoils.Thermal annealing behavior of In in Si was studied by the time differential perturbed angular correlation technique.It is found t...Si wafer(N-type,P-doped,1kΩ-cm)was implanted with ^(111)In by nuclear reaction recoils.Thermal annealing behavior of In in Si was studied by the time differential perturbed angular correlation technique.It is found that after 798℃ annealing 55%of the In atoms occupy substitutional lattice sites in Si with the remainder in perturbed sites.展开更多
文摘Si wafer(N-type,P-doped,1kΩ-cm)was implanted with ^(111)In by nuclear reaction recoils.Thermal annealing behavior of In in Si was studied by the time differential perturbed angular correlation technique.It is found that after 798℃ annealing 55%of the In atoms occupy substitutional lattice sites in Si with the remainder in perturbed sites.
