基于COMSOL数值仿真平台构建锂离子动力电池电化学-热耦合模型,深入研究了正极材料厚度,正、负极材料颗粒半径与电池内部极化间的作用规律,并在此基础上,归纳阐明了动力锂离子电池放电电压平台衰退、放电周期骤减与电池内部极化间的内...基于COMSOL数值仿真平台构建锂离子动力电池电化学-热耦合模型,深入研究了正极材料厚度,正、负极材料颗粒半径与电池内部极化间的作用规律,并在此基础上,归纳阐明了动力锂离子电池放电电压平台衰退、放电周期骤减与电池内部极化间的内在关联。结果表明:正、负极活化极化随正极厚度的增加变化差异较大,正极活化极化在18~31 m V之间波动,而负极可达到260 m V;放电末期负极固相浓差极化急剧增加,最大值达到425 mV。正极颗粒半径对极化的影响较小;负极颗粒半径减小为原来的一半,即0.5Rn时放电中期的负极活化过电势约为55 mV,较1Rn降低45%左右。负极活化极化的增加将导致电池放电电压平台下降,负极活化极化和固相浓差极化在放电末期急剧增加,是电压提前达到放电截止电压的最主要原因。展开更多
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ...With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.展开更多
Recycling useful materials such as Ag, Al, Sn, Cu and Si from waste silicon solar cell chips is a sustainable project to slow down the ever-growing amount of waste crystalline-silicon photovoltaic panels. However, the...Recycling useful materials such as Ag, Al, Sn, Cu and Si from waste silicon solar cell chips is a sustainable project to slow down the ever-growing amount of waste crystalline-silicon photovoltaic panels. However, the recovery cost of the above-mentioned materials from silicon chips via acid-alkaline treatments outweights the gain economically.Herein, we propose a new proof-of-concept to fabricate Si-based anodes with waste silicon chips as raw materials.Nanoparticles from waste silicon chips were prepared with the high-energy ball milling followed by introducing carbon nanotubes and N-doped carbon into the nanoparticles, which amplifies the electrochemical properties. It is explored that Al and Ag elements influenced electrochemical performance respectively. The results showed that the Al metal in the composite possesses an adverse impact on the electrochemical performance. After removing Al, the composite was confirmed to possess a pronounced durable cycling property due to the presence of Ag, resulting in significantly more superior property than the composite having both Al and Ag removed.展开更多
采用恒电位沉积法,在二元Sb-GO溶液体系中得到rGO-Sb预制层,在此过程中,GO被有效还原成rGO,并与Sb形成化学键。随后通过将预制层进行二段硒化热处理,快速去除多余的Se制备出rGO-Sb_(2)Se_(3)光阴极薄膜。通过XRD、SEM、Raman、XPS、UV-...采用恒电位沉积法,在二元Sb-GO溶液体系中得到rGO-Sb预制层,在此过程中,GO被有效还原成rGO,并与Sb形成化学键。随后通过将预制层进行二段硒化热处理,快速去除多余的Se制备出rGO-Sb_(2)Se_(3)光阴极薄膜。通过XRD、SEM、Raman、XPS、UV-vis及PEC等手段对薄膜样品进行表征以及光电化学性能测试。结果表明:负载rGO使得rGO-Sb_(2)Se_(3)在700 nm以内的可见光区域的光吸收系数显著提升。rGO优良的导电性能及较高的载流子迁移率,可以快速转移电荷,抑制载流子的复合,因此光电化学性能以及光稳定性大大提高,光电流密度增大至接近Sb_(2)Se_(3)单相的2倍(−0.20 mA/cm^(2))。又因为rGO-Sb_(2)Se_(3)导带位置(−0.74 V vs.RHE)远负于析氢电位(0 V vs.RHE),故可作为一种新型光还原产氢的阴极,具备广阔的应用前景。展开更多
We report the preparation of Cu_(2)Si_(x)Sn_(1−x)S_(3) thin films for thin film solar cell absorbers using the reactive magnetron co−sputtering technique.Energy dispersive spectrometer and x-ray diffraction analyses i...We report the preparation of Cu_(2)Si_(x)Sn_(1−x)S_(3) thin films for thin film solar cell absorbers using the reactive magnetron co−sputtering technique.Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu_(2)Si_(x)Sn_(1−x)S_(3) thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu_(2)SnS_(3) lattice,leading to a shrinkage of the lattice,and,accordingly,by 2θshifting to larger values.The blue shift of the Raman peak further confirms the formation of Cu_(2)Si_(x)Sn_(1−x)S_(3).Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200–300 nm.Optical measurements indicate an optical absorption coefficient of higher than 104 cm^(−1) and an optical bandgap of 1.17±0.01 eV.展开更多
文摘基于COMSOL数值仿真平台构建锂离子动力电池电化学-热耦合模型,深入研究了正极材料厚度,正、负极材料颗粒半径与电池内部极化间的作用规律,并在此基础上,归纳阐明了动力锂离子电池放电电压平台衰退、放电周期骤减与电池内部极化间的内在关联。结果表明:正、负极活化极化随正极厚度的增加变化差异较大,正极活化极化在18~31 m V之间波动,而负极可达到260 m V;放电末期负极固相浓差极化急剧增加,最大值达到425 mV。正极颗粒半径对极化的影响较小;负极颗粒半径减小为原来的一半,即0.5Rn时放电中期的负极活化过电势约为55 mV,较1Rn降低45%左右。负极活化极化的增加将导致电池放电电压平台下降,负极活化极化和固相浓差极化在放电末期急剧增加,是电压提前达到放电截止电压的最主要原因。
基金Project(51774341) supported by the National Natural Science Foundation of ChinaProject(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
文摘With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
基金Project(51774343) supported by the National Natural Science Foundation of China。
文摘Recycling useful materials such as Ag, Al, Sn, Cu and Si from waste silicon solar cell chips is a sustainable project to slow down the ever-growing amount of waste crystalline-silicon photovoltaic panels. However, the recovery cost of the above-mentioned materials from silicon chips via acid-alkaline treatments outweights the gain economically.Herein, we propose a new proof-of-concept to fabricate Si-based anodes with waste silicon chips as raw materials.Nanoparticles from waste silicon chips were prepared with the high-energy ball milling followed by introducing carbon nanotubes and N-doped carbon into the nanoparticles, which amplifies the electrochemical properties. It is explored that Al and Ag elements influenced electrochemical performance respectively. The results showed that the Al metal in the composite possesses an adverse impact on the electrochemical performance. After removing Al, the composite was confirmed to possess a pronounced durable cycling property due to the presence of Ag, resulting in significantly more superior property than the composite having both Al and Ag removed.
文摘采用恒电位沉积法,在二元Sb-GO溶液体系中得到rGO-Sb预制层,在此过程中,GO被有效还原成rGO,并与Sb形成化学键。随后通过将预制层进行二段硒化热处理,快速去除多余的Se制备出rGO-Sb_(2)Se_(3)光阴极薄膜。通过XRD、SEM、Raman、XPS、UV-vis及PEC等手段对薄膜样品进行表征以及光电化学性能测试。结果表明:负载rGO使得rGO-Sb_(2)Se_(3)在700 nm以内的可见光区域的光吸收系数显著提升。rGO优良的导电性能及较高的载流子迁移率,可以快速转移电荷,抑制载流子的复合,因此光电化学性能以及光稳定性大大提高,光电流密度增大至接近Sb_(2)Se_(3)单相的2倍(−0.20 mA/cm^(2))。又因为rGO-Sb_(2)Se_(3)导带位置(−0.74 V vs.RHE)远负于析氢电位(0 V vs.RHE),故可作为一种新型光还原产氢的阴极,具备广阔的应用前景。
基金Supported by the Natural Science Foundation of Hunan Province under Grant No.09JJ3110the Fundamental Research Funds for the Central Universities under Grant No.201021100029the Research Fund of Young Scholars for the Doctoral Program of Higher Education in China under Grant No.200805331121.
文摘We report the preparation of Cu_(2)Si_(x)Sn_(1−x)S_(3) thin films for thin film solar cell absorbers using the reactive magnetron co−sputtering technique.Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu_(2)Si_(x)Sn_(1−x)S_(3) thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu_(2)SnS_(3) lattice,leading to a shrinkage of the lattice,and,accordingly,by 2θshifting to larger values.The blue shift of the Raman peak further confirms the formation of Cu_(2)Si_(x)Sn_(1−x)S_(3).Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200–300 nm.Optical measurements indicate an optical absorption coefficient of higher than 104 cm^(−1) and an optical bandgap of 1.17±0.01 eV.
