With the complication and delicateness of the nuclear physics experiments, the traditional silicon semiconductor detectors such as silicon surface barrier detector and the Li-drifted detector, cannot satisfy the exper...With the complication and delicateness of the nuclear physics experiments, the traditional silicon semiconductor detectors such as silicon surface barrier detector and the Li-drifted detector, cannot satisfy the experimental requirements.Large area ion-implanted silicon detector and silicon strip detector have been badly needed and frequently used in the experiments.展开更多
The silicon micro-strip detector was fabricated by MEMS (Micro Electro Mechanical Systems) techniques[1].According to the application requirement and the process parameters, a large amount of B+ ions at 40 keV and1.5...The silicon micro-strip detector was fabricated by MEMS (Micro Electro Mechanical Systems) techniques[1].According to the application requirement and the process parameters, a large amount of B+ ions at 40 keV and1.51014 ions/cm2 have been implanted into the wafers. It is found that more than 50% of the micro strips cannotform a functional P-N junction. Based on the suggestion of simulation results, the process of stratified implantationwas then applied with the following procedures. B+ ions were firstly implanted into the wafer at 40 keV, 21014ions/cm2, and then sequentially implanted at 20 keV, 21014 ions/cm2 into the same wafers. Preliminary testresults show that over 95% of the silicon micro-strips in this batch have a perfect P-N junction with a reverse bodyresistance larger than 500 MΩcm. The energy resolution for 5.156 MeV particles of 239Pu source is about 0.8%or even less, as shown in Fig. 1. The structure of the detectors is therefore definitely different from the designeddevices (Fig. 2(a)) shown in Fig. 1, which is more like a P-P+-N structure as shown in Fig. 2(b).展开更多
Many studies have demonstrated that the degradation of silicon detector properties in a radiation field is linearlycorrelated to the displacement damage energy[1] induced by the non-ionizing energy loss (NIEL). It has...Many studies have demonstrated that the degradation of silicon detector properties in a radiation field is linearlycorrelated to the displacement damage energy[1] induced by the non-ionizing energy loss (NIEL). It has been pointedoutthat NIEL can be incorporated into Monte Carlo transport codes to estimate the displacement damage effects[2].Fig. 1 shows the results of a SRIM simulation for 10 MeV protons injected on a double-sided silicon micro-stripdetector. It can be clearly seen that more than 95% of the energy loss can be ascribed to ionizing energy loss, whichprovides energy to excite or ionize extra nuclear electrons to generate electron-hole pairs when incident particlestraverse the detector and collide with lattice atoms. Less than 5% of energy loss is non-ionizing energy loss whichinduces lattice atom displacement damage or transforms into phonons to participate in the crystal lattice vibration.展开更多
Silicon detectors have been widely used in high energy, astrophysics and nuclear medicine due to their perfectposition resolution and energy resolution, wide linear range and quicke response time[1;2]. They are also u...Silicon detectors have been widely used in high energy, astrophysics and nuclear medicine due to their perfectposition resolution and energy resolution, wide linear range and quicke response time[1;2]. They are also used asvertex detectors and track detectors in the world nuclear physics laboratories[3]. Ion-implanted silicon decetors suchas strip decetors and have been used in experiment. A pisition-sensitive decetor, that is 33 grid silicon deterctor,is further developed for experiment purpose. It is shown in Fig. 1, which is made of nine 10 mm10 mm squaresilicons pads.展开更多
We briefly reviewed the experimental study onβ-delayed proton decays near the proton drip line published by our group during the period of 1996-2004, namely the first observation of theβ-delayed proton decays of 9 n...We briefly reviewed the experimental study onβ-delayed proton decays near the proton drip line published by our group during the period of 1996-2004, namely the first observation of theβ-delayed proton decays of 9 new nuclides in the rare-earth region (Fig.1)and the new measurements ofβ-delayed proton decays of 5 nuclides in the mass≈90 region near the N = Z line (Fig. 2) with the aid of the 'p-γ'展开更多
Silicon detectors have been widely used in high energy physics,astrophysics and nuclear medicine due to their perfect position resolution and energy resolution,wider linear range and quicker response time.They are als...Silicon detectors have been widely used in high energy physics,astrophysics and nuclear medicine due to their perfect position resolution and energy resolution,wider linear range and quicker response time.They are also employed for vertex detectors and track detectors by the world physical laboratories because of its 10m spatial resolution.Silicon detectors are packaged with printed circuit board as it is economic and flexible,while it cannot stand cosmic rays and can not support a study in high temperature environment.In order to support silicon detectors working in special environment such as ultrahigh vacuum and high temperature conditions,we manufactured ceramic packaged silicon strip detectors.展开更多
Junction engineering has been proposed[1]and demonstrated[2]to be a promising route to radiation-hardness segmented silicon sensors and a tool for better understanding the mechanism of charge multiplication in severel...Junction engineering has been proposed[1]and demonstrated[2]to be a promising route to radiation-hardness segmented silicon sensors and a tool for better understanding the mechanism of charge multiplication in severely irradiated silicon detectors.We have been developing new p-type strip detectors with deep p+diffusion structure to enhance the charge multiplication effect in the p-type electrodes.The detectors were processed on 4-inch diameter,FZ,300-μm thick,<111>-oriented,n-type silicon wafers,with nominal resistivity of 6 kΩ·cm.展开更多
文摘With the complication and delicateness of the nuclear physics experiments, the traditional silicon semiconductor detectors such as silicon surface barrier detector and the Li-drifted detector, cannot satisfy the experimental requirements.Large area ion-implanted silicon detector and silicon strip detector have been badly needed and frequently used in the experiments.
文摘The silicon micro-strip detector was fabricated by MEMS (Micro Electro Mechanical Systems) techniques[1].According to the application requirement and the process parameters, a large amount of B+ ions at 40 keV and1.51014 ions/cm2 have been implanted into the wafers. It is found that more than 50% of the micro strips cannotform a functional P-N junction. Based on the suggestion of simulation results, the process of stratified implantationwas then applied with the following procedures. B+ ions were firstly implanted into the wafer at 40 keV, 21014ions/cm2, and then sequentially implanted at 20 keV, 21014 ions/cm2 into the same wafers. Preliminary testresults show that over 95% of the silicon micro-strips in this batch have a perfect P-N junction with a reverse bodyresistance larger than 500 MΩcm. The energy resolution for 5.156 MeV particles of 239Pu source is about 0.8%or even less, as shown in Fig. 1. The structure of the detectors is therefore definitely different from the designeddevices (Fig. 2(a)) shown in Fig. 1, which is more like a P-P+-N structure as shown in Fig. 2(b).
文摘Many studies have demonstrated that the degradation of silicon detector properties in a radiation field is linearlycorrelated to the displacement damage energy[1] induced by the non-ionizing energy loss (NIEL). It has been pointedoutthat NIEL can be incorporated into Monte Carlo transport codes to estimate the displacement damage effects[2].Fig. 1 shows the results of a SRIM simulation for 10 MeV protons injected on a double-sided silicon micro-stripdetector. It can be clearly seen that more than 95% of the energy loss can be ascribed to ionizing energy loss, whichprovides energy to excite or ionize extra nuclear electrons to generate electron-hole pairs when incident particlestraverse the detector and collide with lattice atoms. Less than 5% of energy loss is non-ionizing energy loss whichinduces lattice atom displacement damage or transforms into phonons to participate in the crystal lattice vibration.
文摘Silicon detectors have been widely used in high energy, astrophysics and nuclear medicine due to their perfectposition resolution and energy resolution, wide linear range and quicke response time[1;2]. They are also used asvertex detectors and track detectors in the world nuclear physics laboratories[3]. Ion-implanted silicon decetors suchas strip decetors and have been used in experiment. A pisition-sensitive decetor, that is 33 grid silicon deterctor,is further developed for experiment purpose. It is shown in Fig. 1, which is made of nine 10 mm10 mm squaresilicons pads.
基金Supported by the National Natural Science Foundation of China (10375078 and 10475002)
文摘We briefly reviewed the experimental study onβ-delayed proton decays near the proton drip line published by our group during the period of 1996-2004, namely the first observation of theβ-delayed proton decays of 9 new nuclides in the rare-earth region (Fig.1)and the new measurements ofβ-delayed proton decays of 5 nuclides in the mass≈90 region near the N = Z line (Fig. 2) with the aid of the 'p-γ'
文摘Silicon detectors have been widely used in high energy physics,astrophysics and nuclear medicine due to their perfect position resolution and energy resolution,wider linear range and quicker response time.They are also employed for vertex detectors and track detectors by the world physical laboratories because of its 10m spatial resolution.Silicon detectors are packaged with printed circuit board as it is economic and flexible,while it cannot stand cosmic rays and can not support a study in high temperature environment.In order to support silicon detectors working in special environment such as ultrahigh vacuum and high temperature conditions,we manufactured ceramic packaged silicon strip detectors.
文摘Junction engineering has been proposed[1]and demonstrated[2]to be a promising route to radiation-hardness segmented silicon sensors and a tool for better understanding the mechanism of charge multiplication in severely irradiated silicon detectors.We have been developing new p-type strip detectors with deep p+diffusion structure to enhance the charge multiplication effect in the p-type electrodes.The detectors were processed on 4-inch diameter,FZ,300-μm thick,<111>-oriented,n-type silicon wafers,with nominal resistivity of 6 kΩ·cm.
