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Bilayer tellurene-metal interfaces
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作者 Hua Pang Jiahuan Yan +10 位作者 Jie Yang Shiqi Liu Yuanyuan Pan Xiuying Zhang Bowen Shi Hao Tang Jinbo Yang Qihang Liu lianqiang xu Yangyang Wang Jing Lv 《Journal of Semiconductors》 EI CAS CSCD 2019年第6期48-57,共10页
Tellurene, an emerging two-dimensional chain-like semiconductor, stands out for its high switch ratio, carrier mobility and excellent stability in air. Directly contacting the 2D semiconductor materials with metal ele... Tellurene, an emerging two-dimensional chain-like semiconductor, stands out for its high switch ratio, carrier mobility and excellent stability in air. Directly contacting the 2D semiconductor materials with metal electrodes is a feasible doping means to inject carriers. However, Schottky barrier often arises at the metal–semiconductors interface, impeding the transport of carriers. Herein, we investigate the interfacial properties of BL tellurene by contacting with various metals including graphene by using ab initio calculations and quantum transport simulations. Vertical Schottky barriers take place in Ag, Al, Au and Cu electrodes according to the maintenance of the noncontact tellurene layer band structure. Besides, a p-type vertical Schottky contact is formed due to the van der Waals interaction for graphene electrode. As for the lateral direction, p-type Schottky contacts take shape for bulk metal electrodes(hole Schottky barrier heights(SBHs) ranging from 0.19 to 0.35 eV). Strong Fermi level pinning takes place with a pinning factor of 0.02. Notably, a desirable p-type quasi-Ohmic contact is developed for graphene electrode with a hole SBH of 0.08 eV. Our work sheds light on the interfacial properties of BL tellurene based transistors and could guide the experimental selections on electrodes. 展开更多
关键词 BILAYER tellurene SCHOTTKY BARRIER QUANTUM transport simulation FIRST-PRINCIPLES CALCULATION
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