Careful analysis of transients in shipboard power systems is important to achieve long life times of the components in future all-electric ships.In order to accomplish results with high accuracy,it is recommended to v...Careful analysis of transients in shipboard power systems is important to achieve long life times of the components in future all-electric ships.In order to accomplish results with high accuracy,it is recommended to validate cable models as they have significant influence on the amplitude and frequency spectrum of voltage transients.The authors propose comparison of model and measurement using scattering parameters.They can be easily obtained from measurement and simulation and deliver broadband information about the accuracy of the model.The measurement can be performed using a vector network analyzer.The process to extract scattering parameters from simulation models is explained in detail.Three different simulation models of a 5 kV XLPE power cable have been validated.The chosen approach delivers an efficient tool to quickly estimate the quality of a model.展开更多
With the increasing demand for high power density,and to meet extreme working conditions,research has been focused on inves-tigating the performance of power electronics devices at cryogenic temperatures.The aim of th...With the increasing demand for high power density,and to meet extreme working conditions,research has been focused on inves-tigating the performance of power electronics devices at cryogenic temperatures.The aim of this paper is to review the performance of power semiconductor devices,passive components,gate drivers,sensors,and eventually power electronics converters at cryogenic temperatures.By comparing the physical properties of semiconductor materials and the electrical performance of commercial power semiconductor devices,silicon carbide switches show obvious disadvantages due to the increased on-resistance and switching time at cryogenic temperature.In contrast,silicon and gallium nitride devices exhibit improved performance when tem-perature is decreased.The performance ceiling of power semiconductor devices can be influenced by gate drivers,within which the commercial alternatives show deteriorated performance at cryogenic temperature compared to room temperature.Moreover,options for voltage and current sense in cryogenic environments are justified.Based on the cryogenic performance of the various components afore-discussed,this paper ends by presenting an overview of the published converter,which are either partially or fully tested in a cryogenic environment.展开更多
基金Supported by the US Office of Naval Research Under Grant(N00014-04-1-0664)NSF Cooperative Agreement and the State of Florida(DMR-0084173)
文摘Careful analysis of transients in shipboard power systems is important to achieve long life times of the components in future all-electric ships.In order to accomplish results with high accuracy,it is recommended to validate cable models as they have significant influence on the amplitude and frequency spectrum of voltage transients.The authors propose comparison of model and measurement using scattering parameters.They can be easily obtained from measurement and simulation and deliver broadband information about the accuracy of the model.The measurement can be performed using a vector network analyzer.The process to extract scattering parameters from simulation models is explained in detail.Three different simulation models of a 5 kV XLPE power cable have been validated.The chosen approach delivers an efficient tool to quickly estimate the quality of a model.
文摘With the increasing demand for high power density,and to meet extreme working conditions,research has been focused on inves-tigating the performance of power electronics devices at cryogenic temperatures.The aim of this paper is to review the performance of power semiconductor devices,passive components,gate drivers,sensors,and eventually power electronics converters at cryogenic temperatures.By comparing the physical properties of semiconductor materials and the electrical performance of commercial power semiconductor devices,silicon carbide switches show obvious disadvantages due to the increased on-resistance and switching time at cryogenic temperature.In contrast,silicon and gallium nitride devices exhibit improved performance when tem-perature is decreased.The performance ceiling of power semiconductor devices can be influenced by gate drivers,within which the commercial alternatives show deteriorated performance at cryogenic temperature compared to room temperature.Moreover,options for voltage and current sense in cryogenic environments are justified.Based on the cryogenic performance of the various components afore-discussed,this paper ends by presenting an overview of the published converter,which are either partially or fully tested in a cryogenic environment.
