Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon...Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.展开更多
All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity...All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these photodiodes have shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet the mechanisms for such high responsivity remain unexplained. In this work,an all-Si microring is studied systematically as a photodiode to unfold the various absorption mechanisms.At-6.4 V, the microring exhibits responsivity up to0.53 A∕W with avalanche gain, a 3 dB bandwidth of25.5 GHz, and open-eye diagrams up to 100 Gb/s. The measured results reveal the hybrid absorption mechanisms inside the device. A comprehensive model is reported to describe its working principle, which can guide future designs and make the all-Si microring photodiode a promising building block in Si photonics.展开更多
We demonstrate low-voltage waveguide silicon-germanium avalanche photodiodes(APDs)integrated with distributed Bragg reflectors(DBRs).The internal quantum efficiency is improved from 60%to 90%at 1550 nm assisted with D...We demonstrate low-voltage waveguide silicon-germanium avalanche photodiodes(APDs)integrated with distributed Bragg reflectors(DBRs).The internal quantum efficiency is improved from 60%to 90%at 1550 nm assisted with DBRs while still achieving a 25 GHz bandwidth.A low breakdown voltage of 10 V and a gain bandwidth product of near 500 GHz are obtained.APDs with DBRs at a data rate of 64 Gb/s pulse amplitude modulation with four levels(PAM4)show a 30%–40%increase in optical modulation amplitude(OMA)compared to APDs with no DBR.A sensitivity of around-13 d Bm at a data rate of 64 Gb/s PAM4 and a bit error rate of 2.4×10^-4 is realized for APDs with DBRs,which improves the sensitivity by^2 d B compared to APDs with no DBR.展开更多
We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based ...We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.展开更多
文摘Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.
文摘All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these photodiodes have shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet the mechanisms for such high responsivity remain unexplained. In this work,an all-Si microring is studied systematically as a photodiode to unfold the various absorption mechanisms.At-6.4 V, the microring exhibits responsivity up to0.53 A∕W with avalanche gain, a 3 dB bandwidth of25.5 GHz, and open-eye diagrams up to 100 Gb/s. The measured results reveal the hybrid absorption mechanisms inside the device. A comprehensive model is reported to describe its working principle, which can guide future designs and make the all-Si microring photodiode a promising building block in Si photonics.
文摘We demonstrate low-voltage waveguide silicon-germanium avalanche photodiodes(APDs)integrated with distributed Bragg reflectors(DBRs).The internal quantum efficiency is improved from 60%to 90%at 1550 nm assisted with DBRs while still achieving a 25 GHz bandwidth.A low breakdown voltage of 10 V and a gain bandwidth product of near 500 GHz are obtained.APDs with DBRs at a data rate of 64 Gb/s pulse amplitude modulation with four levels(PAM4)show a 30%–40%increase in optical modulation amplitude(OMA)compared to APDs with no DBR.A sensitivity of around-13 d Bm at a data rate of 64 Gb/s PAM4 and a bit error rate of 2.4×10^-4 is realized for APDs with DBRs,which improves the sensitivity by^2 d B compared to APDs with no DBR.
文摘We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.
