[ Objective] This study aimed to investigate enzymatic hydrolysis technology of glutinous rice and the oxidation resistance activity of the enzymatic hydrolysis solution. [ Method ] White glutinous rice was hydrolyzed...[ Objective] This study aimed to investigate enzymatic hydrolysis technology of glutinous rice and the oxidation resistance activity of the enzymatic hydrolysis solution. [ Method ] White glutinous rice was hydrolyzed using four kinds of proteases including neutral protease, alkaline protease, papain and trypsin. Using the scavenging rate of hydroxyl radical （ ·OH） as an indicator and appropriate protease as hydrolytic enzyme, the effects of protein substrate concentration, enzyme dosage, enzymatic hydrolysis temperature and initial pH on the abilities of proteases to scavenge hydroxyl radical from enzymatic hydrolysis solution of glutinous rice were investigated. Based on single-factor test, L9 （34） orthogonal experimental design was adopted, to determine the optimal enzymatic hydrolysis condi- tions leading to the highest oxidation resistance activity of enzymatic hydrolysis solution. [ Result] The optimized process parameters for enzymatic hydrolysis of glu- tinous rice protein with neutral protease were： protein substrate concentration of 2%, enzyme dosage of 24 000 U/g protein （protein meter）, enzymatic hydrolysis temperature of 55 ℃, initial pH of 8.0, and enzymatic hydrolysis duration of 0.5 h; under these conditions, the hydroxyl radical scavenging rate could reach 56. 05% ; protein substrate concentration, enzyme dosage, enzymatic hydrolysis temperature and initial pH had extremely significant effects on the hydroxyl radical scavenging rate. In addition, the activities of antioxidant peptides in glutinous rice hydrolysates were well maintained within a temperature range of 60 - 100℃. [Condusion] The study produced theoretical feasibility reference for the production of functional base powder by spray drying.展开更多
Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.H...Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.Herein,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μs.The PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate voltage.The responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm illumination.Furthermore,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel cells.The architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.展开更多
The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration...The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration.To improve the performance of NIR QLEDs,we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene)(P3 HT)as the hole transport layer(HTL).P3 HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light.The usage of P3 HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs.With the additional incorporation of an interlayer of poly[9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)],P3 HT obviously improves the performance of NIR QLEDs.As electroluminescent synaptic devices,these NIR QLEDs exhibit important synaptic functionalities such as short-and long-term plasticity,and may be employed for image recognition.展开更多
Heterostructure is the basic building block for functional optoelectronic devices.Heterostructures consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attrac...Heterostructure is the basic building block for functional optoelectronic devices.Heterostructures consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attracting great interest for highperformance optoelectronics.However,how to design heterostructure for highly efficient optoelectronic devices remains a big challenge.Here we design high-performance organic semiconductor/WSe_(2)heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IEICO-4F)organic semiconductors with various thicknesses and monolayer WSe_(2).With the increase of IEICO-4F layer thickness,the photoluminescence(PL)characteristics of WSe_(2)could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital(LUMO)level of IEICO-4F to the conduction band minimum(CBM)of WSe_(2).Benefiting from the exquisite charge transfer behavior,the IEICO-4F/WSe_(2)heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65×10^(11)Jones at incident light of 808 nm.This work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe_(2)heterojunction,thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures.展开更多
Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In t...Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In this work,we experimentally measured thermal boundary conductance(TBC)at interfaces between GaN and the substrates with AuSn alloy as a commonly-used adhesive layer by time-domain thermoreflectance(TDTR).We find that the TBCs of GaN/Ti/AuSn/Ti/Si,GaN/Ti/AuSn/Ti/SiC,and GaN/Ti/AuSn/Ti/diamond,are 16.5,14.8,and 13.2 MW·m^(-2)·K^(-1)at room temperature,respectively.Our measured results show that the TBC of GaN/Ti/AuSn/Ti/SiC interface is inferior to the TBC of pristine GaN/SiC interface,due to the large mismatch of phonon modes between AuSn/Ti and substrates,shown as the difference of Debye temperature of two materials.Overall,we measured the TBC at interface between GaN and thermal conductive substrates,and provided a guideline for designing the interface between GaN and substrate at HEMT from a thermal management point of view.展开更多
The high specific capacitance along with good cycling stability are crucial for practical applications of supercapacitors,which always demands high-performance and stable electrode materials.In this work,we report a s...The high specific capacitance along with good cycling stability are crucial for practical applications of supercapacitors,which always demands high-performance and stable electrode materials.In this work,we report a series of ternary composites of CoO-ZnO with different fractions of reduced graphene oxide(rGO)synthesized by in-situ growth on nickel foam,named as CZG-1,2 and 3,respectively.This sort of binder-free electrodes presents excellent electrochemical properties as well as large capacitance due to their low electrical resistance and high oxygen vacancies.Particularly,the sample of CZG-2(CoO-ZnO/rGO 20 mg)in a nanoreticular structure shows the best electrochemical performance with a maximum specific capacitance of 1951.8 F/g(216.9 mAh/g)at a current intensity of 1 A/g.The CZG-2-based hybrid supercapacitor delivers a high energy density up to 45.9 Wh/kg at a high power density of 800 W/kg,and kept the capacitance retention of 90.1%over 5000 charge-discharge cycles.展开更多
Recently,photodynamic therapy(PDT)has been extensively applied in clinical and coadjuvant treatment of various kinds of tumors.However,the photosensitizer(PS)of PDT still lack of high production of singlet oxygen(^(1)...Recently,photodynamic therapy(PDT)has been extensively applied in clinical and coadjuvant treatment of various kinds of tumors.However,the photosensitizer(PS)of PDT still lack of high production of singlet oxygen(^(1)O_(2)),low cytotoxicity and high biocompatibility.Herein,we propose a facile method for establishing a new core-shell structured Sn nanocluster@carbon dots(CDs)PS.Firstly,Sn^(4+)@S-CDs complex is synthesized using the sulfur-doped CDs(S-CDs)and SnCl4 as raw materials,and subsequently the new PS(Sn nanocluster@CDs)is obtained after vaporization of Sn4+@S-CDs solution.Remarkably,the obtained Sn nanocluster@CDs show an enhanced fluorescence as well as a higher ^(1)O_(2) quantum yield(QY)than S-CDs.The high ^(1)O_(2) QY(58.3%)irradiated by the LED light(400-700 nm,40 mW/cm^(2)),induce the reduction of 4 T1 cancer cells viability by 25%.More intriguingly,no visible damage happens to healthy cells,with little impact on liver tissue due to renal excretion,both in vitro and in vivo experiments demonstrate that Sn nanocluster@CDs may become a promising PS,owning a high potential for application in PDT.展开更多
In the version of the article originally published in the volume 62,issue 10,2019 of Sci.China Mater,(page 1470-1478,https://doi.org/10.1007/s40843-019-9437-9),wrong images of Figs 3 and 4 were used.The corrected vers...In the version of the article originally published in the volume 62,issue 10,2019 of Sci.China Mater,(page 1470-1478,https://doi.org/10.1007/s40843-019-9437-9),wrong images of Figs 3 and 4 were used.The corrected version appears below:the units of the x-axes in Fig.3h,the inset of Fig.4a,and Fig.4b,d should be h,s,s,and s,respectively.展开更多
Chemical vapor deposition on metal substrates using gaseous hydrocarbon as carbon feedstock has proven to be a feasible way for synthesis of large-area and uniform graphene films. Meanwhile, rearrangement of amorphous...Chemical vapor deposition on metal substrates using gaseous hydrocarbon as carbon feedstock has proven to be a feasible way for synthesis of large-area and uniform graphene films. Meanwhile, rearrangement of amorphous carbon species extracted from solid carbon sources into crystalline graphene not only offers an alternative route for graphene growth but also provides a powerful tool to excavate the underlying mechanisms of graphene formation. In this review, we discuss the processes of extracting carbon species from various solid carbon sources to form gra- phene. We summarize the typical steps of solid carbon sources to graphene transition and evaluate the resultant graphene film quality with regard to electrical performance. Unveiling the detailed solid carbon to graphene transition process paves the way for a reproducible production of graphene with controlled layer number, defect type and density, toward the final end of graphene＇s commercial utilizations with low cost.展开更多
基金Supported by Education Reform Project of Jiangxi Province(No.JXJG-20084-27)
文摘[ Objective] This study aimed to investigate enzymatic hydrolysis technology of glutinous rice and the oxidation resistance activity of the enzymatic hydrolysis solution. [ Method ] White glutinous rice was hydrolyzed using four kinds of proteases including neutral protease, alkaline protease, papain and trypsin. Using the scavenging rate of hydroxyl radical （ ·OH） as an indicator and appropriate protease as hydrolytic enzyme, the effects of protein substrate concentration, enzyme dosage, enzymatic hydrolysis temperature and initial pH on the abilities of proteases to scavenge hydroxyl radical from enzymatic hydrolysis solution of glutinous rice were investigated. Based on single-factor test, L9 （34） orthogonal experimental design was adopted, to determine the optimal enzymatic hydrolysis condi- tions leading to the highest oxidation resistance activity of enzymatic hydrolysis solution. [ Result] The optimized process parameters for enzymatic hydrolysis of glu- tinous rice protein with neutral protease were： protein substrate concentration of 2%, enzyme dosage of 24 000 U/g protein （protein meter）, enzymatic hydrolysis temperature of 55 ℃, initial pH of 8.0, and enzymatic hydrolysis duration of 0.5 h; under these conditions, the hydroxyl radical scavenging rate could reach 56. 05% ; protein substrate concentration, enzyme dosage, enzymatic hydrolysis temperature and initial pH had extremely significant effects on the hydroxyl radical scavenging rate. In addition, the activities of antioxidant peptides in glutinous rice hydrolysates were well maintained within a temperature range of 60 - 100℃. [Condusion] The study produced theoretical feasibility reference for the production of functional base powder by spray drying.
基金the National Natural Science Foundation of China(Nos.62090030/62090031,51872257,51672244,and 62274145)the National Key R&D Program of China(No.2021YFA1200502)+1 种基金the Natural Science Foundation of Zhejiang Province(No.LZ20F040001)the Zhejiang Province Key R&D Pprogram(No.2020C01120).
文摘Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.Herein,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μs.The PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate voltage.The responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm illumination.Furthermore,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel cells.The architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.
基金mainly supported by the National Key Research and Development Program of China(2017YFA0205700)the National Natural Science Foundation of China(NSFC,61774133 and 6147409)Partial support from the NSFC for Innovative Research Groups(61721005)
文摘The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration.To improve the performance of NIR QLEDs,we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene)(P3 HT)as the hole transport layer(HTL).P3 HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light.The usage of P3 HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs.With the additional incorporation of an interlayer of poly[9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)],P3 HT obviously improves the performance of NIR QLEDs.As electroluminescent synaptic devices,these NIR QLEDs exhibit important synaptic functionalities such as short-and long-term plasticity,and may be employed for image recognition.
基金the National Key R&D Program of China(No.2021YFA1200502)the National Natural Science Foundation of China(Nos.62090030/62090031,51872257,and 51672244)+1 种基金the Natural Science Foundation of Zhejiang Province,China(No.LZ20F040001)the Zhejiang Province Key R&D programs(No.2020C01120).
文摘Heterostructure is the basic building block for functional optoelectronic devices.Heterostructures consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attracting great interest for highperformance optoelectronics.However,how to design heterostructure for highly efficient optoelectronic devices remains a big challenge.Here we design high-performance organic semiconductor/WSe_(2)heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IEICO-4F)organic semiconductors with various thicknesses and monolayer WSe_(2).With the increase of IEICO-4F layer thickness,the photoluminescence(PL)characteristics of WSe_(2)could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital(LUMO)level of IEICO-4F to the conduction band minimum(CBM)of WSe_(2).Benefiting from the exquisite charge transfer behavior,the IEICO-4F/WSe_(2)heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65×10^(11)Jones at incident light of 808 nm.This work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe_(2)heterojunction,thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures.
基金This work was supported by the National Natural Science Foundation of China(No.12004211)the Guangdong Natural Science Foundation(No.2019A1515010868)+3 种基金the Guangdong Key Research and Development Program(No.2019B010132001)Shenzhen Peacock ProgramThis work was also supported by Beijing Outstanding Young Scientist Program(No.BJJWZYJH0120191000103)the Major Science and Technology Innovation Project of Shandong Province(No.2019JZZY010210).
文摘Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In this work,we experimentally measured thermal boundary conductance(TBC)at interfaces between GaN and the substrates with AuSn alloy as a commonly-used adhesive layer by time-domain thermoreflectance(TDTR).We find that the TBCs of GaN/Ti/AuSn/Ti/Si,GaN/Ti/AuSn/Ti/SiC,and GaN/Ti/AuSn/Ti/diamond,are 16.5,14.8,and 13.2 MW·m^(-2)·K^(-1)at room temperature,respectively.Our measured results show that the TBC of GaN/Ti/AuSn/Ti/SiC interface is inferior to the TBC of pristine GaN/SiC interface,due to the large mismatch of phonon modes between AuSn/Ti and substrates,shown as the difference of Debye temperature of two materials.Overall,we measured the TBC at interface between GaN and thermal conductive substrates,and provided a guideline for designing the interface between GaN and substrate at HEMT from a thermal management point of view.
基金the National Natural Science Foundations of China(No.51772001)。
文摘The high specific capacitance along with good cycling stability are crucial for practical applications of supercapacitors,which always demands high-performance and stable electrode materials.In this work,we report a series of ternary composites of CoO-ZnO with different fractions of reduced graphene oxide(rGO)synthesized by in-situ growth on nickel foam,named as CZG-1,2 and 3,respectively.This sort of binder-free electrodes presents excellent electrochemical properties as well as large capacitance due to their low electrical resistance and high oxygen vacancies.Particularly,the sample of CZG-2(CoO-ZnO/rGO 20 mg)in a nanoreticular structure shows the best electrochemical performance with a maximum specific capacitance of 1951.8 F/g(216.9 mAh/g)at a current intensity of 1 A/g.The CZG-2-based hybrid supercapacitor delivers a high energy density up to 45.9 Wh/kg at a high power density of 800 W/kg,and kept the capacitance retention of 90.1%over 5000 charge-discharge cycles.
基金financially supported by the National Natural Science Foundation of China(No.51772001)the support from the Key Laboratory of Structure and Functional Regulation of Hybrid Materials(Anhui University),Ministry of Education,Chinathe Key Laboratory of Environment-Friendly Polymer Materials of Anhui Province,Anhui University。
文摘Recently,photodynamic therapy(PDT)has been extensively applied in clinical and coadjuvant treatment of various kinds of tumors.However,the photosensitizer(PS)of PDT still lack of high production of singlet oxygen(^(1)O_(2)),low cytotoxicity and high biocompatibility.Herein,we propose a facile method for establishing a new core-shell structured Sn nanocluster@carbon dots(CDs)PS.Firstly,Sn^(4+)@S-CDs complex is synthesized using the sulfur-doped CDs(S-CDs)and SnCl4 as raw materials,and subsequently the new PS(Sn nanocluster@CDs)is obtained after vaporization of Sn4+@S-CDs solution.Remarkably,the obtained Sn nanocluster@CDs show an enhanced fluorescence as well as a higher ^(1)O_(2) quantum yield(QY)than S-CDs.The high ^(1)O_(2) QY(58.3%)irradiated by the LED light(400-700 nm,40 mW/cm^(2)),induce the reduction of 4 T1 cancer cells viability by 25%.More intriguingly,no visible damage happens to healthy cells,with little impact on liver tissue due to renal excretion,both in vitro and in vivo experiments demonstrate that Sn nanocluster@CDs may become a promising PS,owning a high potential for application in PDT.
文摘In the version of the article originally published in the volume 62,issue 10,2019 of Sci.China Mater,(page 1470-1478,https://doi.org/10.1007/s40843-019-9437-9),wrong images of Figs 3 and 4 were used.The corrected version appears below:the units of the x-axes in Fig.3h,the inset of Fig.4a,and Fig.4b,d should be h,s,s,and s,respectively.
基金Acknowledgement This work was supported by the Zhejiang Provincial Natural Science Foundation of China （Youth Talent Program： R4110030）, the Program for New Century Excellent Talents in University （No. NCET-12-0494）, the Research Fund for the Doctoral Program of Higher Education （No. 20130101110123）, the Program for 14th China-Japan S＆T Cooperation （No. 2013DFG52800）, and by the National Natural Science Foundation of China （No. 51472219）.
文摘Chemical vapor deposition on metal substrates using gaseous hydrocarbon as carbon feedstock has proven to be a feasible way for synthesis of large-area and uniform graphene films. Meanwhile, rearrangement of amorphous carbon species extracted from solid carbon sources into crystalline graphene not only offers an alternative route for graphene growth but also provides a powerful tool to excavate the underlying mechanisms of graphene formation. In this review, we discuss the processes of extracting carbon species from various solid carbon sources to form gra- phene. We summarize the typical steps of solid carbon sources to graphene transition and evaluate the resultant graphene film quality with regard to electrical performance. Unveiling the detailed solid carbon to graphene transition process paves the way for a reproducible production of graphene with controlled layer number, defect type and density, toward the final end of graphene＇s commercial utilizations with low cost.
