为探究天麻(Gastrodia elata Bl.)质量评价的重要指标,本研究测定了27份陕西省汉中市天麻样品的外观性状、气味、颜色、含水量、浸出物和主要有效成分的含量,采用主成分分析(Principal Component Analysis,PCA)法确定其主要成分,结合熵...为探究天麻(Gastrodia elata Bl.)质量评价的重要指标,本研究测定了27份陕西省汉中市天麻样品的外观性状、气味、颜色、含水量、浸出物和主要有效成分的含量,采用主成分分析(Principal Component Analysis,PCA)法确定其主要成分,结合熵权TOPSIS(Technique for Order Preference by Similarity to an Ideal Solution)法得出天麻质量评价体系中各评价指标的权重,并对天麻质量进行综合评价。结果表明汉中市宁强县、略阳县、勉县产出的天麻在块茎粗、螺环纹数、鲜重、干重、颜色明亮度和总色度值上有一定差异;水分、浸出物含量以略阳县最高;天麻素与对羟基苯甲醇总含量以宁强县最高,勉县所产天麻的天麻素与对羟基苯甲醇含量接近,其成分含量比例与其他县差异显著;此外,宁强县所产天麻的巴利森苷类成分含量最高。PCA熵权TOPSIS法评价结果显示,宁强县、略阳县天麻排名靠前,各项指标中颜色因子、巴利森苷类因子、气味因子权重较大,因此天麻质量评价应注重颜色、气味以及巴利森苷类成分含量。展开更多
Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging technology.Des...Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging technology.Despite their potential,large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on nonpassivated(100)facets and trap states generated by CQD fusion.In this work,we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate(100)facets of halidecapped large-size CQDs,leading to suppressed bandtail states and reduced defect concentration.Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm^(2) at -10 mV,which is among the lowest reported for PbS CQD photodiodes.Furthermore,the performance of the photodiodes is exemplary,yielding an external quantum efficiency of 50.8%(which corresponds to a responsivity of 0.532 A W^(-1))and a specific detectivity of 2.5×10^(12) Jones at 1300 nm.By integrating CQD photodiodes with CMOS ROICs,the CQD imager provides high-resolution(640×512)SWIR imaging for infrared penetration and material discrimination.展开更多
文摘为探究天麻(Gastrodia elata Bl.)质量评价的重要指标,本研究测定了27份陕西省汉中市天麻样品的外观性状、气味、颜色、含水量、浸出物和主要有效成分的含量,采用主成分分析(Principal Component Analysis,PCA)法确定其主要成分,结合熵权TOPSIS(Technique for Order Preference by Similarity to an Ideal Solution)法得出天麻质量评价体系中各评价指标的权重,并对天麻质量进行综合评价。结果表明汉中市宁强县、略阳县、勉县产出的天麻在块茎粗、螺环纹数、鲜重、干重、颜色明亮度和总色度值上有一定差异;水分、浸出物含量以略阳县最高;天麻素与对羟基苯甲醇总含量以宁强县最高,勉县所产天麻的天麻素与对羟基苯甲醇含量接近,其成分含量比例与其他县差异显著;此外,宁强县所产天麻的巴利森苷类成分含量最高。PCA熵权TOPSIS法评价结果显示,宁强县、略阳县天麻排名靠前,各项指标中颜色因子、巴利森苷类因子、气味因子权重较大,因此天麻质量评价应注重颜色、气味以及巴利森苷类成分含量。
基金National Natural Science Foundation of China,Grant/Award Numbers:U22A2083,62204091,62374068National Key Research and Development Program of China,Grant/Award Number:2021YFA0715502+5 种基金Key R&D program of Hubei Province,Grant/Award Number:2021BAA014Innovation Project of Optics Valley Laboratory,Grant/Award Numbers:OVL2021BG009,OVL2023ZD002Exploration Project of Natural Science Foundation of Zhejiang Province,Grant/Award Number:LY23F040005Fund for Innovative Research Groups of the Natural Science Foundation of Hubei Province,Grant/Award Number:2020CFA034Fund from Science,Technology and Innovation Commission of Shenzhen Municipality,Grant/Award Numbers:GJHZ20210705142540010,GJHZ20220913143403007China Postdoctoral Science Foundation,Grant/Award Numbers:2021M691118,2022M711237,2022M721243,2023T160244。
文摘Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging technology.Despite their potential,large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on nonpassivated(100)facets and trap states generated by CQD fusion.In this work,we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate(100)facets of halidecapped large-size CQDs,leading to suppressed bandtail states and reduced defect concentration.Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm^(2) at -10 mV,which is among the lowest reported for PbS CQD photodiodes.Furthermore,the performance of the photodiodes is exemplary,yielding an external quantum efficiency of 50.8%(which corresponds to a responsivity of 0.532 A W^(-1))and a specific detectivity of 2.5×10^(12) Jones at 1300 nm.By integrating CQD photodiodes with CMOS ROICs,the CQD imager provides high-resolution(640×512)SWIR imaging for infrared penetration and material discrimination.
