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Nanoscale strain engineering of graphene and graphene-based devices 被引量:4
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作者 n.-c.yeh C.-c.Hsu +3 位作者 M.L.Teague J.-Q.Wang D.A.Boyd C.-c.Chen 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2016年第3期497-509,共13页
Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one a... Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology. 展开更多
关键词 Graphene Strain-engineering Nanostructures Dirac fermions Pseudo-magnetic field Valleytronics
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