Intelligent ion gels,which possess highly tunable mechanical,electrical,and stimulus‐responsive properties,have emerged as powerful candidates in the field of artificial intelligence,telemedicine,and health monitorin...Intelligent ion gels,which possess highly tunable mechanical,electrical,and stimulus‐responsive properties,have emerged as powerful candidates in the field of artificial intelligence,telemedicine,and health monitoring.To enrich the functionality of ion gels,it is critical to explore the link between the structure and function of ion gels.In this review,we provide an overview of the synthesis path and functional derivatives of ion gels.The conformational relationships of ion gels have been discussed,such as the effect of structure on electrical conductivity as well as sensing properties.From the perspective of stimulus response,the role of ion gels in areas such as bionic haptics,neural devices,artificial muscles,and intelligent displays has also been explored.It is possible that smart ion gels will open up a new horizon in the upcoming smart era,especially after the current challenges are resolved.展开更多
In spite of the explosive rise of research on memristive switching,more improvements in tunability,versatility,and hetero-integration are required through the discovery and application of novel materials.Herein,we rep...In spite of the explosive rise of research on memristive switching,more improvements in tunability,versatility,and hetero-integration are required through the discovery and application of novel materials.Herein,we report resistance switching in nano-thick two-dimensional(2D)crystals of bismuth selenium(BiSe).The BiSe devices exhibit nonvolatile bipolar resistance switching,volatile switching,and electrical bistable behavior in different conditions.The different memristive behavior of BiSe devices may be related to the concentration of Bi ions in this Bi-rich structure,which directly affects the capability of filaments forming.Furthermore,the external mechanical strain is applied in modulation of multi-layer BiSe devices.The memristive BiSe devices show a large on/off ratio of~10^(4)and retention time of~104 s.The discovery of memristive switching behavior in multi-layer BiSe is attributed to the forming of Bi filaments.The resistance switching behavior in multi-layer BiSe demonstrates the potential application in the flexible memories and functional integrated devices.展开更多
基金support of the National Natural Science Foundation of China(Nos.52125205,U20A20166,and 52192614)the National Key R&D Program of China(Nos.2021YFB3200302 and 2021YFB3200304)+2 种基金the Natural Science Foundation of Beijing Municipality(Nos.Z180011 and 2222088)the Shenzhen Science and Technology Program(No.KQTD20170810105439418)the Fundamental Research Funds for the Central Universities.
文摘Intelligent ion gels,which possess highly tunable mechanical,electrical,and stimulus‐responsive properties,have emerged as powerful candidates in the field of artificial intelligence,telemedicine,and health monitoring.To enrich the functionality of ion gels,it is critical to explore the link between the structure and function of ion gels.In this review,we provide an overview of the synthesis path and functional derivatives of ion gels.The conformational relationships of ion gels have been discussed,such as the effect of structure on electrical conductivity as well as sensing properties.From the perspective of stimulus response,the role of ion gels in areas such as bionic haptics,neural devices,artificial muscles,and intelligent displays has also been explored.It is possible that smart ion gels will open up a new horizon in the upcoming smart era,especially after the current challenges are resolved.
基金support of the National Natural Science Foundation of China(Nos.52125205,U20A20166,52192614,and 52103304)the National Key R&D Program of China(Nos.2021YFB3200302 and 2021YFB3200304)+3 种基金Natural Science Foundation of Beijing Municipality(Nos.Z180011 and 2222088)Shenzhen Science and Technology Program(No.KQTD20170810105439418)the open research fund of State Key Laboratory of Bioelectronics,Southeast University(No.SKLB2022-P01)the Fundamental Research Funds for the Central Universities.
文摘In spite of the explosive rise of research on memristive switching,more improvements in tunability,versatility,and hetero-integration are required through the discovery and application of novel materials.Herein,we report resistance switching in nano-thick two-dimensional(2D)crystals of bismuth selenium(BiSe).The BiSe devices exhibit nonvolatile bipolar resistance switching,volatile switching,and electrical bistable behavior in different conditions.The different memristive behavior of BiSe devices may be related to the concentration of Bi ions in this Bi-rich structure,which directly affects the capability of filaments forming.Furthermore,the external mechanical strain is applied in modulation of multi-layer BiSe devices.The memristive BiSe devices show a large on/off ratio of~10^(4)and retention time of~104 s.The discovery of memristive switching behavior in multi-layer BiSe is attributed to the forming of Bi filaments.The resistance switching behavior in multi-layer BiSe demonstrates the potential application in the flexible memories and functional integrated devices.
