All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity...All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these photodiodes have shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet the mechanisms for such high responsivity remain unexplained. In this work,an all-Si microring is studied systematically as a photodiode to unfold the various absorption mechanisms.At-6.4 V, the microring exhibits responsivity up to0.53 A∕W with avalanche gain, a 3 dB bandwidth of25.5 GHz, and open-eye diagrams up to 100 Gb/s. The measured results reveal the hybrid absorption mechanisms inside the device. A comprehensive model is reported to describe its working principle, which can guide future designs and make the all-Si microring photodiode a promising building block in Si photonics.展开更多
We discuss the design and demonstration of various Ⅲ–Ⅴ/Si asymmetric Mach–Zehnder interferometer(AMZI)and ring-assisted AMZI(de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-...We discuss the design and demonstration of various Ⅲ–Ⅴ/Si asymmetric Mach–Zehnder interferometer(AMZI)and ring-assisted AMZI(de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded Ⅲ–Ⅴ/Si metal-oxide-semiconductor capacitor(MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration.The second-and third-order MOSCAP AMZI(de-)interleavers exhibit cross-talk(XT) levels down to -22 dB and -32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI(de-)interleavers have XT levels down to -27 dB,-22 dB, and-20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6–27 μA∕cm^(2). To the best of our knowledge, we have demonstrated for the first time, athermal Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.展开更多
文摘All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these photodiodes have shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet the mechanisms for such high responsivity remain unexplained. In this work,an all-Si microring is studied systematically as a photodiode to unfold the various absorption mechanisms.At-6.4 V, the microring exhibits responsivity up to0.53 A∕W with avalanche gain, a 3 dB bandwidth of25.5 GHz, and open-eye diagrams up to 100 Gb/s. The measured results reveal the hybrid absorption mechanisms inside the device. A comprehensive model is reported to describe its working principle, which can guide future designs and make the all-Si microring photodiode a promising building block in Si photonics.
基金Advanced Research Projects Agency-Energy(DE-AR0001039)。
文摘We discuss the design and demonstration of various Ⅲ–Ⅴ/Si asymmetric Mach–Zehnder interferometer(AMZI)and ring-assisted AMZI(de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded Ⅲ–Ⅴ/Si metal-oxide-semiconductor capacitor(MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration.The second-and third-order MOSCAP AMZI(de-)interleavers exhibit cross-talk(XT) levels down to -22 dB and -32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI(de-)interleavers have XT levels down to -27 dB,-22 dB, and-20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6–27 μA∕cm^(2). To the best of our knowledge, we have demonstrated for the first time, athermal Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.
