Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures cal...Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization.Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.展开更多
基金Army Research Office,Grant/Award Number:W911NF-17-1-0065Defense Advanced Research Projects Agency,Grant/Award Number:GG11972.153060。
文摘Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization.Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
