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Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method
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作者 Shu-Ping deng Feng Cheng +6 位作者 De-Cong Li Yu Tang Zhong Chen Lan-Xian Shen Hong-Xia Liu Pei-Zhi Yang shu-kang deng 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第4期92-96,共5页
Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu dop... Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K. 展开更多
关键词 Seebeck Eu/Ba Electrical Transport Properties of Type Prepared by Ga Flux Method Sn-Based Single-Crystalline Clathrates BA GA
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Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β-Zn4Sb3 prepared by the Sn-flux method
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作者 Hong-xia Liu Shu-ping deng +2 位作者 De-cong Li Lan-xian Shen shu-kang deng 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期441-445,共5页
This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_(4.4)Sb_3 Ge_xSn_3(x = 0–0.15). The prepared samples... This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_(4.4)Sb_3 Ge_xSn_3(x = 0–0.15). The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m^(-1) at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10^(-3)W·m^(-1)·K^(-2) at 543 K. 展开更多
关键词 thermoelectric materials β-Zn4Sb3 flux method electrical transport properties
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