A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition techniq...A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.展开更多
Thin films constituted of CuAlS_(2) nanoparticles deposited with various deposition velocities in single and multilayers onto silicon Si(111)substrates by thermal evaporation have been studied by lifting their structu...Thin films constituted of CuAlS_(2) nanoparticles deposited with various deposition velocities in single and multilayers onto silicon Si(111)substrates by thermal evaporation have been studied by lifting their structural and thermal properties.Thermal properties of Si(111)and Si(111)/CuAlS_(2) structures are determined by using the photothermal deflection technique by comparing experimental and theoretical signals.We succeed in extracting the thermal conductivity,the thermal diffusivity,and the electron free mean path of these deposited chalcogenide layers.For the multilayers,the obtained values of the thermal conductivity are in good agreement with the theoretical data.展开更多
基金Supported by the Scientific Research Deanship of University of Dammam under Grant No 2014264
文摘A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.
文摘Thin films constituted of CuAlS_(2) nanoparticles deposited with various deposition velocities in single and multilayers onto silicon Si(111)substrates by thermal evaporation have been studied by lifting their structural and thermal properties.Thermal properties of Si(111)and Si(111)/CuAlS_(2) structures are determined by using the photothermal deflection technique by comparing experimental and theoretical signals.We succeed in extracting the thermal conductivity,the thermal diffusivity,and the electron free mean path of these deposited chalcogenide layers.For the multilayers,the obtained values of the thermal conductivity are in good agreement with the theoretical data.
