Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subba...Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers,which has first derivative functional lineshapes.By fitting the experimental spectra,an unusual transition coming from the interfaces in MQWs was observed.展开更多
Room temperature photoreflectance were made on a selectively doped GaAs/n-Al_(X)Ga_(1-X)As two-dimensional electron gas grown by molecular beam epitaxy(MBE).The lineshapes can be made fit by Aspnes'theory,and the ...Room temperature photoreflectance were made on a selectively doped GaAs/n-Al_(X)Ga_(1-X)As two-dimensional electron gas grown by molecular beam epitaxy(MBE).The lineshapes can be made fit by Aspnes'theory,and the results explained with a simple model.展开更多
文摘Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers,which has first derivative functional lineshapes.By fitting the experimental spectra,an unusual transition coming from the interfaces in MQWs was observed.
文摘Room temperature photoreflectance were made on a selectively doped GaAs/n-Al_(X)Ga_(1-X)As two-dimensional electron gas grown by molecular beam epitaxy(MBE).The lineshapes can be made fit by Aspnes'theory,and the results explained with a simple model.
