ZnO films were deposited on glass substrates by means of a direct current (DC) sputtering technique. The physical properties of the films were investigated on the basis of X-ray diffraction measurements. It was found ...ZnO films were deposited on glass substrates by means of a direct current (DC) sputtering technique. The physical properties of the films were investigated on the basis of X-ray diffraction measurements. It was found that as-deposited films show c-axis oriented crystal normal to the surface with the extension of c axis by 1.27% that is estimated from the shift of the peak in the X-ray diffraction pattern. Post-deposition annealing in air at higher than 400℃ eliminates the shift and sharpens the diffraction peak structure at the same time. The electrical resistivity continues to decrease from 500 Ω•cm down to 0.6 Ω•cm by annealing as high as 600℃.展开更多
ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by...ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.展开更多
ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure o...ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure on the basis of X-ray diffraction measurements. We found the optimum conditions of the temperature and the time to be 600°C and 40 minutes for the preparation, respectively. In addition, the layer-by-layer forming was not found to degrade the film from viewpoint of X-ray line width.展开更多
文摘ZnO films were deposited on glass substrates by means of a direct current (DC) sputtering technique. The physical properties of the films were investigated on the basis of X-ray diffraction measurements. It was found that as-deposited films show c-axis oriented crystal normal to the surface with the extension of c axis by 1.27% that is estimated from the shift of the peak in the X-ray diffraction pattern. Post-deposition annealing in air at higher than 400℃ eliminates the shift and sharpens the diffraction peak structure at the same time. The electrical resistivity continues to decrease from 500 Ω•cm down to 0.6 Ω•cm by annealing as high as 600℃.
文摘ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.
文摘ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure on the basis of X-ray diffraction measurements. We found the optimum conditions of the temperature and the time to be 600°C and 40 minutes for the preparation, respectively. In addition, the layer-by-layer forming was not found to degrade the film from viewpoint of X-ray line width.
