Hexagonal gallium nitride films were successfully fabricated throughammoniating Ga_2O_3 films deposited on silicon (111) substrates by electrophoresis. The structure,composition, and surface morphology of the formed f...Hexagonal gallium nitride films were successfully fabricated throughammoniating Ga_2O_3 films deposited on silicon (111) substrates by electrophoresis. The structure,composition, and surface morphology of the formed films were characterized by X-ray diffraction(XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmissionelectron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films withhexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminaryresults suggest that varying the ammoniating temperature has obvious effect on the quality of theGaN films formed with this method.展开更多
基金This work is financially supported by the Key Research Program of National Natural Science Foundation of China (No. 90201025)the National Natural Science Foundation of China (No. 60071006)
文摘Hexagonal gallium nitride films were successfully fabricated throughammoniating Ga_2O_3 films deposited on silicon (111) substrates by electrophoresis. The structure,composition, and surface morphology of the formed films were characterized by X-ray diffraction(XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmissionelectron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films withhexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminaryresults suggest that varying the ammoniating temperature has obvious effect on the quality of theGaN films formed with this method.
