A novel full color SOP（system on panel） AMOLED display based on the MIUC polycrystalline silicon TFT technique, and a new control circuit for the panel, which can deal with both VGA and DVI input signals have been d...A novel full color SOP（system on panel） AMOLED display based on the MIUC polycrystalline silicon TFT technique, and a new control circuit for the panel, which can deal with both VGA and DVI input signals have been developed. To realize gray-scale a sub-frame technique has been designed and im- plemented by FPGA device, in which an 120 module has been inserted. Through actual circuit, the whole design has been proven and the advantages of the SOP AMOLED display panel have been confirmed.展开更多
Thin film transistors （TFTs） of microcrystalline silicon （μc-Si） can provide higher mobility and stability than that of a-Si and better uniformity than that of poly-Si TFTs, and it would be more suitable to be ap...Thin film transistors （TFTs） of microcrystalline silicon （μc-Si） can provide higher mobility and stability than that of a-Si and better uniformity than that of poly-Si TFTs, and it would be more suitable to be applied to larger-area AMOLEDs. By using 2coYAG laser ann. ealing, crystalline μc-Si thin film on plastic substrate has been investigated and the proper laser energy needed for crystallization has been indicated. It has been found that the dehydrogenation process at 300-450℃ for a few of hours could be omitted by decreasing the H content in the crystallization precursor, which is suitable for laser crystallization on plastic substrates. The crystalline volume fraction （Xc） and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy. By this method, the μc-Si on plastic substrate with Xc and grain size is respectively 85% （at the maximum） and 50 nm.展开更多
文摘A novel full color SOP（system on panel） AMOLED display based on the MIUC polycrystalline silicon TFT technique, and a new control circuit for the panel, which can deal with both VGA and DVI input signals have been developed. To realize gray-scale a sub-frame technique has been designed and im- plemented by FPGA device, in which an 120 module has been inserted. Through actual circuit, the whole design has been proven and the advantages of the SOP AMOLED display panel have been confirmed.
基金This work has been supported by "863" Project of National Min- istry of Science and Technology (No. 2004AA33570)Key Project of NSFC (No. 60437030)Tianjin Natural Science Founda- tion (No.05YFJMJC01400)
文摘Thin film transistors （TFTs） of microcrystalline silicon （μc-Si） can provide higher mobility and stability than that of a-Si and better uniformity than that of poly-Si TFTs, and it would be more suitable to be applied to larger-area AMOLEDs. By using 2coYAG laser ann. ealing, crystalline μc-Si thin film on plastic substrate has been investigated and the proper laser energy needed for crystallization has been indicated. It has been found that the dehydrogenation process at 300-450℃ for a few of hours could be omitted by decreasing the H content in the crystallization precursor, which is suitable for laser crystallization on plastic substrates. The crystalline volume fraction （Xc） and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy. By this method, the μc-Si on plastic substrate with Xc and grain size is respectively 85% （at the maximum） and 50 nm.
