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Double-balanced mixer based on monolayer graphene fieldeffect transistors
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作者 Min Wu weida hong +3 位作者 Guanyu Liu Jiejun Zhang Ziao Tian Miao Zhang 《Journal of Semiconductors》 EI CAS CSCD 2022年第5期79-83,共5页
Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm i... Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm is fabricated through the van der Walls(vdW) transfer process, and then the existing large-signal GFET model is described, and the model is implemented in Verilog-A for analysis in RF and microwave circuits. Next a double-balanced mixer based on four GFETs is designed and analyzed in advanced design system(ADS) tools. Finally, the simulation results show that with the input of 300 and 280 MHz,the IIP3 of the mixed signal is 24.5 dBm. 展开更多
关键词 GFET MIXER RF SIMULATION IIP3
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