We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8...We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.展开更多
The efficient synthesis of （S）-dihydroresorcylide （la） along with trans-resorcylide dimethyl ether （2b）, was achieved in linear 9 steps from commercially available orcinol monohydrate （6） with esterification, ...The efficient synthesis of （S）-dihydroresorcylide （la） along with trans-resorcylide dimethyl ether （2b）, was achieved in linear 9 steps from commercially available orcinol monohydrate （6） with esterification, carbonylation, and ring-closing metathesis （RCM） as the key steps in the synthetic sequence.展开更多
We report on a high-performance mid-wavelength infrared avalanche photodetector(APD)with separate absorption and multiplication regions.InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as ...We report on a high-performance mid-wavelength infrared avalanche photodetector(APD)with separate absorption and multiplication regions.InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material.At room temperature,the APD’s peak response wavelength is 3.27μm,and the 50%cutoff wavelength is 3.5μm.The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27μm when the applied reverse bias voltage is 14.6 V.The measured peak detectivity D*of the device is 2.05×10^9 cm·Hz^0.5/W at 3.27μm.展开更多
We investigate the dark current mechanism for an unpassivated mid wavelength(MW) type II InAs/GaSb superlattice infrared photodetector by doing the variablearea diode tests. The bulk resistance-area product and the re...We investigate the dark current mechanism for an unpassivated mid wavelength(MW) type II InAs/GaSb superlattice infrared photodetector by doing the variablearea diode tests. The bulk resistance-area product and the resistivity due to the surface current are determined to be17.72 X cm2 and 704.23 X cm at 77 K, respectively. It is found that for all the mesa sizes used, the dark current is dominated or predominated by the surface component, and with scaling back the mesa size, the surface current increases while the bulk component decreases. The activation energy is determined to be 145 meV for the temperature range around 140–280 K, while it is 6 meV when temperature is below 100 K. It is also found that the dark current is dominated by the generation-recombination current for the MW device when temperature is between140 and 280 K.展开更多
基金supported in part by China’s NSF Program 61874103
文摘We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.
基金This research work was financially supported by the Natural Science Foundation of China （Nos. 21021063, 81273430）, the National Marine ＂863＂ Project （Nos. 2011AA09070102 and 2013AA092902） and the SKLDR/SIMM Projects （No. SIMM1203ZZ-03）. We also thank Professor Minghua Xu （SIMM-CAS） for helpful discussion in preparation of this manuscript.
文摘The efficient synthesis of （S）-dihydroresorcylide （la） along with trans-resorcylide dimethyl ether （2b）, was achieved in linear 9 steps from commercially available orcinol monohydrate （6） with esterification, carbonylation, and ring-closing metathesis （RCM） as the key steps in the synthetic sequence.
基金National Key Research and Development Program of China(2017YFA0303400)National Natural Science Foundation of China(61674142,61774149,61874103)。
文摘We report on a high-performance mid-wavelength infrared avalanche photodetector(APD)with separate absorption and multiplication regions.InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material.At room temperature,the APD’s peak response wavelength is 3.27μm,and the 50%cutoff wavelength is 3.5μm.The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27μm when the applied reverse bias voltage is 14.6 V.The measured peak detectivity D*of the device is 2.05×10^9 cm·Hz^0.5/W at 3.27μm.
基金supported in part by the National Natural Science Foundation of China (61176014, 61307116, 61290303, and 61021003)the National Basic Research Program of China (2010CB327602)
文摘We investigate the dark current mechanism for an unpassivated mid wavelength(MW) type II InAs/GaSb superlattice infrared photodetector by doing the variablearea diode tests. The bulk resistance-area product and the resistivity due to the surface current are determined to be17.72 X cm2 and 704.23 X cm at 77 K, respectively. It is found that for all the mesa sizes used, the dark current is dominated or predominated by the surface component, and with scaling back the mesa size, the surface current increases while the bulk component decreases. The activation energy is determined to be 145 meV for the temperature range around 140–280 K, while it is 6 meV when temperature is below 100 K. It is also found that the dark current is dominated by the generation-recombination current for the MW device when temperature is between140 and 280 K.
