In this study,the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor de...In this study,the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor deposition(LPMOCVD).High resolution X-ray diffraction(HRXRD),atom force microscopy(AFM),scanning electron microscopy(SEM),photoluminescence(PL) and Raman scattering measurements have been employed to study the crystal quality,threading dislocation density,surface morphology,optical properties and phonon properties of thick AlGaN epifilms.The results indicate that AlGaN epifilms crystal quality can be improved greatly when grown on the free-standing GaN substrate.We calculated the threading dislocation density and found that thick AlGaN epifilm grown on the free-standing GaN substrate is much lower in total threading dislocation density than that grown on the sapphire substrate,although the surface morphology is rougher than that of sapphire substrate.展开更多
GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM...GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM).The crystal quality and optical properties of GaN films were examined by the variations of the micro-Raman and photoluminescence(PL) spectra with proton fluence.It was observed that the surface became a little more rough after irradiation.The Raman spectra indicated that the strain of materials and carrier concentration were not affected by the proton injection.The full-width at half-maximum(FWHM) of E 2 high phonon mode narrowed,which was consistent with the FWHM of PL near-band-edge emission(BE).The spectra of yellow luminescence and blue luminescence normalized to the intensity of BE demonstrated a little increase of Ga vacancy and a large decrease of O N,which may be the main reason for the change of optical properties.展开更多
InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The sur...InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence(PL). The InGaN/GaN MQW structure grown on the GaN template with SiO_2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity.Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.展开更多
基金supported by the National Key Science and Technology Special Project,China(Grant No.2008ZX01002-002)the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033)the Fundamental Research Funds for the Central Universities,China(Grant No. JY10000904009)
文摘In this study,the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor deposition(LPMOCVD).High resolution X-ray diffraction(HRXRD),atom force microscopy(AFM),scanning electron microscopy(SEM),photoluminescence(PL) and Raman scattering measurements have been employed to study the crystal quality,threading dislocation density,surface morphology,optical properties and phonon properties of thick AlGaN epifilms.The results indicate that AlGaN epifilms crystal quality can be improved greatly when grown on the free-standing GaN substrate.We calculated the threading dislocation density and found that thick AlGaN epifilm grown on the free-standing GaN substrate is much lower in total threading dislocation density than that grown on the sapphire substrate,although the surface morphology is rougher than that of sapphire substrate.
基金supported by the National Natural Science Foundation of China (Grant No. 61106106)the Fundamental Research Funds for the Central Universities (Grant No. K50510250006)
文摘GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM).The crystal quality and optical properties of GaN films were examined by the variations of the micro-Raman and photoluminescence(PL) spectra with proton fluence.It was observed that the surface became a little more rough after irradiation.The Raman spectra indicated that the strain of materials and carrier concentration were not affected by the proton injection.The full-width at half-maximum(FWHM) of E 2 high phonon mode narrowed,which was consistent with the FWHM of PL near-band-edge emission(BE).The spectra of yellow luminescence and blue luminescence normalized to the intensity of BE demonstrated a little increase of Ga vacancy and a large decrease of O N,which may be the main reason for the change of optical properties.
基金supported by the Key Research and Development Program in Shaanxi Province (Grant Nos. 2018ZDCXL-GY-01-02-02 and 2018ZDCXLGY-01-07)Wuhu and Xidian University Special Fund for Industry University Research Cooperation (Grant No. XWYCXY-012020007)+2 种基金the National Natural Science Foundation of China (Grant No. 62074120)the Fundamental Research Funds for the Central Universitiesthe Innovation Fund of Xidian University。
文摘InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence(PL). The InGaN/GaN MQW structure grown on the GaN template with SiO_2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity.Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.
