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High-resolution ARPES endstation for in situ electronic structure investigations at SSRF 被引量:2
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作者 Yi-Chen Yang Zheng-Tai Liu +8 位作者 Ji-Shan Liu Zhong-Hao Liu Wan-Ling Liu xiang-le lu Hong-Ping Mei Ang Li Mao Ye Shan Qiao Da-Wei Shen 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2021年第3期94-106,共13页
Angle-resolved photoemission spectroscopy(ARPES)is one of the most powerful experimental techniques in condensed matter physics.Synchrotron ARPES,which uses photons with high flux and continuously tunable energy,has b... Angle-resolved photoemission spectroscopy(ARPES)is one of the most powerful experimental techniques in condensed matter physics.Synchrotron ARPES,which uses photons with high flux and continuously tunable energy,has become particularly important.However,an excellent synchrotron ARPES system must have features such as a small beam spot,super-high energy resolution,and a user-friendly operation interface.A synchrotron beamline and an endstation(BL03 U)were designed and constructed at the Shanghai Synchrotron Radiation Facility.The beam spot size at the sample position is 7.5(V)μm×67(H)μm,and the fundamental photon range is 7-165 eV;the ARPES system enables photoemission with an energy resolution of 2.67 meV at21.2 eV.In addition,the ARPES system of this endstation is equipped with a six-axis cryogenic sample manipulator(the lowest temperature is 7 K)and is integrated with an oxide molecular beam epitaxy system and a scanning tunneling microscope,which can provide an advanced platform for in situ characterization of the fine electronic structure of condensed matter. 展开更多
关键词 SYNCHROTRON ARPES In situ VUV laser Quantum materials
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Electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film
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作者 Xue-Fu Zhang Zhong-Hao Liu +5 位作者 Wan-Ling Liu xiang-le lu Zhuo-Jun Li Qing-Kai Yu Da-Wei Shen Xiao-Ming Xie 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第8期250-253,共4页
Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices.For epitaxially grown graphene,the pr... Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices.For epitaxially grown graphene,the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface energies.Utilizing angle-resolved photoemission spectroscopy,here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111)alloy film by chemical vapor deposition.With a relatively low growth temperature,graphene on Cu/Ni(111)exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111).The linear dispersions forming Dirac cone are as wide as 2 e V,with the Fermi velocity of approximately 1.1×10^6 m/s.Dirac cone opens a gap of approximately 152 meV at the binding energy of approximately 304 meV.Our findings would promote the study of engineering of graphene on different substrate materials. 展开更多
关键词 SINGLE-CRYSTAL GRAPHENE ELECTRONIC STRUCTURE Cu/Ni(111)
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Growth of high-quality perovskite (110)-SrIrO_3 thin films using reactive molecular beam epitaxy
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作者 Kai-Li Zhang Cong-Cong Fan +6 位作者 Wan-Ling Liu Yv -Feng Wu xiang-le lu Zheng-Tai Liu Ji-Shan Liu Zhong-Hao Liu Da-Wei Shen 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期578-581,共4页
Recently, 5d transition metal iridates have been reported as promising materials for the manttfacture of exotic quan- tum states. Apart from the semimetallic ground states that have been observed, perovskite SrlrO3 is... Recently, 5d transition metal iridates have been reported as promising materials for the manttfacture of exotic quan- tum states. Apart from the semimetallic ground states that have been observed, perovskite SrlrO3 is also predicted to have a lattice-symmetrically protected topological state in the (110) plane due to its strong: spin-orbil coupling and electron correlation. Compared with non-polar (001)-SflrO3, the especial polarity of (110)-SrIrC)3 undoubtedly adds the: difficulty of fabrication and largely impedes the research on its surface states. Here, we have successfully synthesized high-quality (110)-SflrO3 thin films on (110)-SrTiO3 substrates by reactive molecular beam epitaxy fi^r the first time. Both reflec- tion high-energy electron diffraction pattems and x-ray diffraction measurements suggest the expected orientation and outstanding crystallinity. A (1 × 2) surface reconstruction driven from the surface instabiJity, the. same as that reported in (110)-SrTiO3, is observed. The electric transport measurements uncover that (110)-SrIrO3 exhibits a more prominent semimetallic property in comparison to (001)-SrIrO3. 展开更多
关键词 molecular beam epitaxy iridates topological crystalline metal sunace reconstruction
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