期刊文献+
共找到5篇文章
< 1 >
每页显示 20 50 100
Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors
1
作者 Xinyu Wu Weihua Han +3 位作者 xiaosong zhao Yangyan Guo Xiaodi Zhang Fuhua Yang 《Journal of Semiconductors》 EI CAS CSCD 2020年第7期44-48,共5页
We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors.We demonstrate that the localization length of t... We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors.We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field.The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy.This is useful for future quantum information processing by single dopant atoms in silicon. 展开更多
关键词 silicon junctionless nanowire transistor discrete dopant atoms gate regulation transition temperatures
下载PDF
Inter-WBAN Coexistence and Interference Mitigation
2
作者 Bin Liu xiaosong zhao +1 位作者 Lei Zou Chang Wen Chen 《ZTE Communications》 2015年第2期28-35,共8页
With promising applications in e-health and entertainment, wireless body area networks (WBANs) have attracted the interest of both academia and industry. If WBANs are densely deployed within a small area, serious pr... With promising applications in e-health and entertainment, wireless body area networks (WBANs) have attracted the interest of both academia and industry. If WBANs are densely deployed within a small area, serious problems may arise between the WBANs. In this paper, we discuss issues related to the coexistence of WBANs and investigate the main factors that cause inter-WBAN interference. We survey inter- WBAN interference mitigation strategies and track recent research developments. We also discuss unresolved issues related to inter-WBAN interference mitigation and propose fu- ture research directions. 展开更多
关键词 wireless body area network (WBAN) inter-WBAN interference mitigation E-HEALTH
下载PDF
Characteristics of volatile compounds removal in biogas slurry of pig manure by ozone oxidation and organic solvents extraction 被引量:8
3
作者 Yujun Wang Lianshuang Feng +6 位作者 xiaosong zhao Xiulan Ma Jingmin Yang Huiqing Liu Sen Dou Miping Zhou Zhonglei Xie 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2013年第9期1800-1807,共8页
Biogas slurry is not suitable for liquid fertilizer due to its high amounts of volatile materials being of complicated composition and peculiar smell. In order to remove volatiles from biogas slurry efficiently, the d... Biogas slurry is not suitable for liquid fertilizer due to its high amounts of volatile materials being of complicated composition and peculiar smell. In order to remove volatiles from biogas slurry efficiently, the dynamic headspace and gas chromatography-mass spectrometry were used to clear the composition of volatiles. Nitrogen stripping and superfluous ozone were also used to remove volatiles from biogas slurry. The results showed that there were 21 kinds of volatile compounds in the biogas slurry, including sulfur compounds, organic amines, benzene, halogen generation of hydrocarbons and alkanes, some of which had strong peculiar smell. The volatile compounds in biogas slurry can be removed with the rate of 53.0% by nitrogen stripping and with rate of 81.7% by the oxidization and stripping of the superfluous ozone. On this basis, the removal rate of the volatile compounds reached 99.2% by chloroform and n-hexane extraction, and almost all of odor was eliminated. The contents of some dissolved organic compounds decreased obviously and however main plant nutrients had no significant change in the biogas slurry after being treated. 展开更多
关键词 biogas slurry dynamic headspace REMOVAL volatile compounds plant nutrients
原文传递
Research on the Work-rest Scheduling in the Manual Order Picking Systems to Consider Human Factors 被引量:1
4
作者 xiaosong zhao Na Liu +3 位作者 Shumeng zhao Jinhui Wu Kun Zhang Rui Zhang 《Journal of Systems Science and Systems Engineering》 SCIE EI CSCD 2019年第3期344-355,共12页
As the status of order picking in the warehousing and distribution system has been raised,the work-rest scheduling of picking becomes particularly important.Although science and technology have developed rapidly,manua... As the status of order picking in the warehousing and distribution system has been raised,the work-rest scheduling of picking becomes particularly important.Although science and technology have developed rapidly,manual picking is still essential and indispensable.However,previous researches focused on the study of the sequencing,ignoring human factors.The paper presents a work-rest schedule model in parts to picker picking system.Two objectives are proposed that include minimizing the picking time and minimizing picking error rate.And workers'fatigue,workload is taken into account in the manual order picking systems because the fatigue can have a large influence on the picking time and the picking error rate.A genetic algorithm is used to solve a multi-objective optimization problem that the model concerns and looking for a Pareto front as the most effective methods for solving this problem.Once the original data is given,the work-rest scheduling model is built and the work sequence,and the number of breaks are determined to be chosen by decision makers.In addition,a case study of the model is used to confirm that the model is effective and it is necessary to consider the human factor in the picking system. 展开更多
关键词 Work-rest schedule picking system fatigue WORKLOAD picking error rate
原文传递
Dopant atoms as quantum components in silicon nanoscale devices
5
作者 xiaosong zhao Weihua Han +5 位作者 Hao Wang Liuhong Ma Xiaoming Li Wang Zhang Wei Yan Fuhua Yang 《Journal of Semiconductors》 EI CAS CSCD 2018年第6期43-50,共8页
Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a sing... Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. 展开更多
关键词 silicon nanoscale devices dopant atoms ionization energy dopant-induced quantum dots quantum transport
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部