This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization(DTCO)of advanced semiconductor memories.After reviewing the DTCO approach to semiconductor devices scaling,we introduce a multi-...This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization(DTCO)of advanced semiconductor memories.After reviewing the DTCO approach to semiconductor devices scaling,we introduce a multi-stage simulation flow to study the deviceto-circuit performance of advanced memory technologies in presence of statistical and process variability.We present a DRAM example to highlight the DTCO enablement for both memory and periphery.Our analysis demonstrates how the evaluation of different possible technology improvements and design combinations can be carried out to maximize the benefits of continuous technology scaling for a given set of manufacturing equipment.展开更多
Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionizatio...Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In_(0.52)Al_(0.48) As and Al_(0.74)Ga_(0.26) As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.展开更多
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures cal...Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization.Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.展开更多
文摘This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization(DTCO)of advanced semiconductor memories.After reviewing the DTCO approach to semiconductor devices scaling,we introduce a multi-stage simulation flow to study the deviceto-circuit performance of advanced memory technologies in presence of statistical and process variability.We present a DRAM example to highlight the DTCO enablement for both memory and periphery.Our analysis demonstrates how the evaluation of different possible technology improvements and design combinations can be carried out to maximize the benefits of continuous technology scaling for a given set of manufacturing equipment.
基金Defense Advanced Research Projects Agency(DARPA)(W911NF-10-1-0391)Army Research Office(ARO)(W911NF-10-1-0391)
文摘Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In_(0.52)Al_(0.48) As and Al_(0.74)Ga_(0.26) As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.
基金Army Research Office,Grant/Award Number:W911NF-17-1-0065Defense Advanced Research Projects Agency,Grant/Award Number:GG11972.153060。
文摘Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization.Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
