Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu...Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.展开更多
An integrated system has been provided with a-Si/H solar cells as energy conversion device,NiCo2O4 battery-supercapacitor hybrid(BSH)as energy storage device,and light emitting diodes(LEDs)as energy utilization device...An integrated system has been provided with a-Si/H solar cells as energy conversion device,NiCo2O4 battery-supercapacitor hybrid(BSH)as energy storage device,and light emitting diodes(LEDs)as energy utilization device.By designing three-dimensional hierarchical NiCo2O4 arrays as faradic electrode,with capacitive electrode of active carbon(AC),BSHs were assembled with energy density of 16.6 Wh kg-1,power density of 7285 W kg-1,long-term stability with 100% retention after 15,000 cycles,and rather low self-discharge.The NiCo2O4//AC BSH was charged to 1.6 V in 1 s by solar cells and acted as reliable sources for powering LEDs.The integrated system is rational for operation,having an overall efficiency of 8.1% with storage efficiency of 74.24%.The integrated system demonstrates a stable solar power conversion,outstanding energy storage behavior,and reliable light emitting.Our study offers a precious strategy to design a self-driven integrated system for highly efficient energy utilization.展开更多
基金supported by National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Natural Science Foundation of China(LD19E020001)+1 种基金Zhejiang Provincial Key Research and Development Program(2021C01030)"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province(2021C01SA301612)。
文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
基金the support of National Natural Science Foundation of China (Nos. 51702284 and 21878270)Zhejiang Provincial Natural Science Foundation of China (LR19B060002)+5 种基金the Startup Foundation for Hundred-Talent Program of Zhejiang University(112100-193820101/001/022)the support of Shenzhen Science and Technology Project of China (JCYJ20170412105400428)the support of Zhejiang Provincial Natural Science Foundation of China (LR16F040001)Open Project of Laboratory for Biomedical Engineering of Ministry of Education, Zhejiang Universitythe support of Innovation Platform of Energy Storage Engineering and New Material in Zhejiang University (K19-534202-002)Provincial Innovation Team on Hydrogen Electric Hybrid Power Systems in Zhejiang Province
文摘An integrated system has been provided with a-Si/H solar cells as energy conversion device,NiCo2O4 battery-supercapacitor hybrid(BSH)as energy storage device,and light emitting diodes(LEDs)as energy utilization device.By designing three-dimensional hierarchical NiCo2O4 arrays as faradic electrode,with capacitive electrode of active carbon(AC),BSHs were assembled with energy density of 16.6 Wh kg-1,power density of 7285 W kg-1,long-term stability with 100% retention after 15,000 cycles,and rather low self-discharge.The NiCo2O4//AC BSH was charged to 1.6 V in 1 s by solar cells and acted as reliable sources for powering LEDs.The integrated system is rational for operation,having an overall efficiency of 8.1% with storage efficiency of 74.24%.The integrated system demonstrates a stable solar power conversion,outstanding energy storage behavior,and reliable light emitting.Our study offers a precious strategy to design a self-driven integrated system for highly efficient energy utilization.
