The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in s...The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.展开更多
The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si ...The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.展开更多
A new kind of tangent derivative,M-derivative,for set-valued function is introduced with help of a modified Dubovitskij-Miljutin cone.Several generalized pseudoconvex set-valued functions are introduced.When both the ...A new kind of tangent derivative,M-derivative,for set-valued function is introduced with help of a modified Dubovitskij-Miljutin cone.Several generalized pseudoconvex set-valued functions are introduced.When both the objective function and constraint function are M-derivative,under the assumption of near conesubconvexlikeness,by applying properties of the set of strictly efficient points and a separation theorem for convex sets,Fritz John and Kuhn-Tucker necessary optimality conditions are obtained for a point pair to be a strictly efficient element of set-valued optimization problem.Under the assumption of generalized pseudoconvexity,a Kuhn-Tucker sufficient optimality condition is obtained for a point pair to be a strictly efficient element of set-valued optimization problem.展开更多
The concept of a cone subarcwise connected set-valued map is introduced. Several examples are given to illustrate that the cone subarcwise connected set-valued map is a proper generalization of the cone arcwise connec...The concept of a cone subarcwise connected set-valued map is introduced. Several examples are given to illustrate that the cone subarcwise connected set-valued map is a proper generalization of the cone arcwise connected set-valued map, as well as the arcwise connected set is a proper generalization of the convex set,respectively. Then, by virtue of the generalized second-order contingent epiderivative, second-order necessary optimality conditions are established for a point pair to be a local global proper efficient element of set-valued optimization problems. When objective function is cone subarcwise connected, a second-order sufficient optimality condition is also obtained for a point pair to be a global proper efficient element of set-valued optimization problems.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61904155)the Science and technology Project of Fujian Provincial Department of Education,China(Grant No.JAT200484)+1 种基金the Natural Science Foundation of Fujian Province,China(Grant No.2018J05115)the Scientific Research Projects of Xiamen University of Technology,China(Grant No.YKJCX2020078).
文摘The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.
基金supported by the High Level Talent Project of Xiamen University of Technology,China(Grant Nos.YKJ16012R and YKJ16016R)the National Natural Science Foundation of China(Grant No.51702271)
文摘The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.
基金This research was supported by the National Natural Science Foundation of China Grant(11961047)the Natural Science Foundation of Jiangxi Province(20192BAB201010).
文摘A new kind of tangent derivative,M-derivative,for set-valued function is introduced with help of a modified Dubovitskij-Miljutin cone.Several generalized pseudoconvex set-valued functions are introduced.When both the objective function and constraint function are M-derivative,under the assumption of near conesubconvexlikeness,by applying properties of the set of strictly efficient points and a separation theorem for convex sets,Fritz John and Kuhn-Tucker necessary optimality conditions are obtained for a point pair to be a strictly efficient element of set-valued optimization problem.Under the assumption of generalized pseudoconvexity,a Kuhn-Tucker sufficient optimality condition is obtained for a point pair to be a strictly efficient element of set-valued optimization problem.
基金Supported by the National Natural Science Foundation of China Grant 11461044the Natural Science Foundation of Jiangxi Province(20151BAB201027)the Science and Technology Foundation of the Education Department of Jiangxi Province(GJJ12010)
文摘The concept of a cone subarcwise connected set-valued map is introduced. Several examples are given to illustrate that the cone subarcwise connected set-valued map is a proper generalization of the cone arcwise connected set-valued map, as well as the arcwise connected set is a proper generalization of the convex set,respectively. Then, by virtue of the generalized second-order contingent epiderivative, second-order necessary optimality conditions are established for a point pair to be a local global proper efficient element of set-valued optimization problems. When objective function is cone subarcwise connected, a second-order sufficient optimality condition is also obtained for a point pair to be a global proper efficient element of set-valued optimization problems.
