Pristine GeTe shows inferior thermoelectric performance around unit due to the large carrier concentration induced by the presence of intrinsic high concentration of Ge vacancy. In this study, we report a thermoelectr...Pristine GeTe shows inferior thermoelectric performance around unit due to the large carrier concentration induced by the presence of intrinsic high concentration of Ge vacancy. In this study, we report a thermoelectric figure of merit ZT of 1.56 at 700 K, realized in Sb-doped GeTe based thermoelectric(TE)materials via combined effect of suppression of intrinsic Ge vacancy and Sb doping. The nonequilibrium nature during melt spinning process plays very important role. For one thing, it promotes the homogeneity in Ge_(1-x)Sb_xTe samples and refines the grain size of the product. Moreover the persistent Ge precipitated as impurity phase in the traditional synthesis process is found to be dissolved back into the GeTe sublattice, accompanying with a drastic suppression of Ge vacancies concentration which in combination with Sb electron doping significantly reduced the inherent carrier concentration in GeTe.Low carrier concentration, approaching the optimum carrier concentration ～3.74 × 10^(-20) cm^(-3) and a high power factor of 4.01 × 10^(-3) W m^(-1)K^(-2) at 750 K are achieved for Ge_(0.98)Sb_(0.02) Te sample. In addition,the enhanced grain boundary phonon scattering by refining the grain size through melt spinning(MS)process, coupled with the intensified alloying phonon scattering via Sb doping leads to low thermal conductivity of 1.53 W m^(-1) K^(-1) at 700 K for Ge_(0.94) Sb_(0.06) Te sample. All those contribute to a high ZT value,representing over 50% improvement in the ZT value compared to the Sb free samples, which provides an alternative way for ultrafast synthesis of high performance GeTe based thermoelectric material.展开更多
Miniaturization of efficient thermoelectric(TE)devices has long been hindered by the weak mechanical strength and insufficient heat-to-electricity conversion efficiency of zone-melted(ZM)ingots.Here,we successfully pr...Miniaturization of efficient thermoelectric(TE)devices has long been hindered by the weak mechanical strength and insufficient heat-to-electricity conversion efficiency of zone-melted(ZM)ingots.Here,we successfully prepared a robust high-performance p-type Bi_(0.4)Sb_(1.6)Te_(3.72)bulk alloy by combining an ultrafast thermal explosion reaction with the spark plasma sintering(TER-SPS)process.It is observed that the introduced excess Te not only enhances the(00l)-oriented texture to ensure an outstanding power factor(PF)of 5 mW m^(−1)K^(−2),but also induces extremely high-density line defects of up to 10^(11)–10^(12)cm^(−2).Benefiting from such heavily dense line defects,the enhancement of the electronic thermal conductance from the increased electron mobility is fully compensated by the stronger phonon scattering,leading to an evident net reduction in total thermal conductivity.As a result,a superior ZT value of~1.4 at 350 K is achieved,which is 40%higher than that of commercial ZM ingots.Moreover,owing to the strengthening of grain refinement and highdensity line defects,the mechanical compressive stress reaches up to 94 MPa,which is 154%more than that of commercial single crystals.This research presents an effective strategy for the collaborative optimization of the texture,TE performance,and mechanical strength of Bi2Te3-based materials.As such,the present study contributes significantly to the future commercial development of miniature TE devices.展开更多
As the core components of fifth-generation(5G)communication technology,optical modules should be consistently miniaturized in size while improving their level of integration.This inevitably leads to a dramatic spike i...As the core components of fifth-generation(5G)communication technology,optical modules should be consistently miniaturized in size while improving their level of integration.This inevitably leads to a dramatic spike in power consumption and a consequent increase in heat flow density when operating in a confined space.To ensure a successful start-up and operation of 5G optical modules,active cooling and precise temperature control via the Peltier effect in confined space is essential yet challenging.In this work,p-type Bi_(0.5)Sb_(1.5)Te_(3)and n-type Bi_(2)Te_(2.7)Se_(0.3)bulk thermoelectric(TE)materials are used,and a micro thermoelectric thermostat(micro-TET)(device size,2×9.3×1.1mm^(3);leg size,0.4×0.4×0.5mm^(3);number of legs,44)is successfully integrated into a 5G optical module with Quad Small Form Pluggable 28 interface.As a result,the internal temperature of this kind of optical module is always maintained at 45.7℃ and the optical power is up to 7.4 dBm.Furthermore,a multifactor design roadmap is created based on a 3D numerical model using the ANSYS finite element method,taking into account the number of legs(N),leg width(W),leg length(L),filling atmosphere,electric contact resistance(Rec),thermal contact resistance(Rtc),ambient temperature(Ta),and the heat generated by the laser source(QL).It facilitates the integrated fabrication of micro-TET,and shows the way to enhance packaging and performance under different operating conditions.According to the roadmap,the micro-TET(2×9.3×1mm^(3),W=0.3 mm,L=0.4 mm,N=68 legs)is fabricated and consumes only 0.89W in cooling mode(Q_(L)=0.7W,T_(a)=80℃)and 0.36Win heating mode(T_(a)=0℃)to maintain the laser temperature of 50℃.This research will hopefully be applied to other microprocessors for precise temperature control and integrated manufacturing.展开更多
基金supported by the National Natural Science Foundation of China(51402222,51521001,and 51632006)the 111 Project of China(B07040)
文摘Pristine GeTe shows inferior thermoelectric performance around unit due to the large carrier concentration induced by the presence of intrinsic high concentration of Ge vacancy. In this study, we report a thermoelectric figure of merit ZT of 1.56 at 700 K, realized in Sb-doped GeTe based thermoelectric(TE)materials via combined effect of suppression of intrinsic Ge vacancy and Sb doping. The nonequilibrium nature during melt spinning process plays very important role. For one thing, it promotes the homogeneity in Ge_(1-x)Sb_xTe samples and refines the grain size of the product. Moreover the persistent Ge precipitated as impurity phase in the traditional synthesis process is found to be dissolved back into the GeTe sublattice, accompanying with a drastic suppression of Ge vacancies concentration which in combination with Sb electron doping significantly reduced the inherent carrier concentration in GeTe.Low carrier concentration, approaching the optimum carrier concentration ～3.74 × 10^(-20) cm^(-3) and a high power factor of 4.01 × 10^(-3) W m^(-1)K^(-2) at 750 K are achieved for Ge_(0.98)Sb_(0.02) Te sample. In addition,the enhanced grain boundary phonon scattering by refining the grain size through melt spinning(MS)process, coupled with the intensified alloying phonon scattering via Sb doping leads to low thermal conductivity of 1.53 W m^(-1) K^(-1) at 700 K for Ge_(0.94) Sb_(0.06) Te sample. All those contribute to a high ZT value,representing over 50% improvement in the ZT value compared to the Sb free samples, which provides an alternative way for ultrafast synthesis of high performance GeTe based thermoelectric material.
基金financially supported by the National Key Research and Development Program of China (2018YFB0703600)the National Natural Science Foundation of China (51772232)+1 种基金the 111 Project of China (B07040)Wuhan Frontier Project on Applied Research Foundation (2019010701011405)
文摘Miniaturization of efficient thermoelectric(TE)devices has long been hindered by the weak mechanical strength and insufficient heat-to-electricity conversion efficiency of zone-melted(ZM)ingots.Here,we successfully prepared a robust high-performance p-type Bi_(0.4)Sb_(1.6)Te_(3.72)bulk alloy by combining an ultrafast thermal explosion reaction with the spark plasma sintering(TER-SPS)process.It is observed that the introduced excess Te not only enhances the(00l)-oriented texture to ensure an outstanding power factor(PF)of 5 mW m^(−1)K^(−2),but also induces extremely high-density line defects of up to 10^(11)–10^(12)cm^(−2).Benefiting from such heavily dense line defects,the enhancement of the electronic thermal conductance from the increased electron mobility is fully compensated by the stronger phonon scattering,leading to an evident net reduction in total thermal conductivity.As a result,a superior ZT value of~1.4 at 350 K is achieved,which is 40%higher than that of commercial ZM ingots.Moreover,owing to the strengthening of grain refinement and highdensity line defects,the mechanical compressive stress reaches up to 94 MPa,which is 154%more than that of commercial single crystals.This research presents an effective strategy for the collaborative optimization of the texture,TE performance,and mechanical strength of Bi2Te3-based materials.As such,the present study contributes significantly to the future commercial development of miniature TE devices.
基金National Key Research and Development Program of China,Grant/Award Number:2019YFA0704900National Natural Science Foundation of China,Grant/Award Number:52202289。
文摘As the core components of fifth-generation(5G)communication technology,optical modules should be consistently miniaturized in size while improving their level of integration.This inevitably leads to a dramatic spike in power consumption and a consequent increase in heat flow density when operating in a confined space.To ensure a successful start-up and operation of 5G optical modules,active cooling and precise temperature control via the Peltier effect in confined space is essential yet challenging.In this work,p-type Bi_(0.5)Sb_(1.5)Te_(3)and n-type Bi_(2)Te_(2.7)Se_(0.3)bulk thermoelectric(TE)materials are used,and a micro thermoelectric thermostat(micro-TET)(device size,2×9.3×1.1mm^(3);leg size,0.4×0.4×0.5mm^(3);number of legs,44)is successfully integrated into a 5G optical module with Quad Small Form Pluggable 28 interface.As a result,the internal temperature of this kind of optical module is always maintained at 45.7℃ and the optical power is up to 7.4 dBm.Furthermore,a multifactor design roadmap is created based on a 3D numerical model using the ANSYS finite element method,taking into account the number of legs(N),leg width(W),leg length(L),filling atmosphere,electric contact resistance(Rec),thermal contact resistance(Rtc),ambient temperature(Ta),and the heat generated by the laser source(QL).It facilitates the integrated fabrication of micro-TET,and shows the way to enhance packaging and performance under different operating conditions.According to the roadmap,the micro-TET(2×9.3×1mm^(3),W=0.3 mm,L=0.4 mm,N=68 legs)is fabricated and consumes only 0.89W in cooling mode(Q_(L)=0.7W,T_(a)=80℃)and 0.36Win heating mode(T_(a)=0℃)to maintain the laser temperature of 50℃.This research will hopefully be applied to other microprocessors for precise temperature control and integrated manufacturing.
