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Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect
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作者 Hongming Mou Ziyao Lu +2 位作者 Yuchen Pu zhaochu luo Xiaozhong Zhang 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2024年第6期1437-1448,共12页
Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin ... Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes. 展开更多
关键词 spin logic spin–orbit torque negative differential resistance full-adder
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Magnetic van der Waals materials:Synthesis,structure,magnetism,and their potential applications
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作者 Zhongchong Lin Yuxuan Peng +3 位作者 Baochun Wu Changsheng Wang zhaochu luo Jinbo Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第8期57-72,共16页
As the family of magnetic materials is rapidly growing,two-dimensional(2D)van der Waals(vdW)magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their pot... As the family of magnetic materials is rapidly growing,two-dimensional(2D)van der Waals(vdW)magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their potential applications.This paper reviews the recent progress on emergent vd W magnetic compounds and their potential applications in devices.First,we summarize the current vd W magnetic materials and their synthetic methods.Then,we focus on their structure and the modulation of magnetic properties by analyzing the representative vd W magnetic materials with different magnetic structures.In addition,we pay attention to the heterostructures of vd W magnetic materials,which are expected to produce revolutionary applications of magnetism-related devices.To motivate the researchers in this area,we finally provide the challenges and outlook on 2D vd W magnetism. 展开更多
关键词 van der Waals magnetic materials 2D magnetism modulation methods SPINTRONICS
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