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GaN based ultraviolet laser diodes
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作者 Jing Yang Degang Zhao +9 位作者 Zongshun Liu Yujie Huang Baibin Wang Xiaowei Wang Yuheng zhang zhenzhuo zhang Feng Liang Lihong Duan Hai Wang Yongsheng Shi 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期6-15,共10页
In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we ana... In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated. 展开更多
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